63-7622-42 IRFBE30PBF N-Channel MOSFET, 4.1 A, 800 V, 3-Pin TO-220AB Vishay IRFBE30PBF
Features
- N-Channel MOSFET, 600V to 1000V, Vishay Semiconductor
Spec
- Quantity:1set(50pieces)
- Channel Type : N
- Maximum Continuous Drain Current : 4.1 A
- Maximum Drain Source Voltage : 800 V
- Maximum Drain Source Resistance : 3 Ω
- Minimum Gate Threshold Voltage : 2V
- Maximum Gate Source Voltage : -20 V, +20 V
- Package Type : TO-220AB
- Mounting Type : Through Hole
- Pin Count : 3
- Channel Mode : Enhancement
- Category : Power MOSFET
- Maximum Power Dissipation : 125 W
- Minimum Operating Temperature : -55 °C
- CODE No.:178-0818
| Order No. | 63-7622-42 | |
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| Model No. | IRFBE30PBF | |
| Standard price |
JPY: 14,900
USD: 92.71
Excange rate 1USD= 160.72JPY
Valid price in Japan |
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| Quantity | 1set(50pieces) | |
| Stock in Japan |
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| Supplier Stock |
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