63-7560-84 ［Discontinued］BSP603S2LHUMA1 N-Channel MOSFET, 5.2 A, 55 V OptiMOS, 3 + Tab-Pin SOT-223 Infineon BSP603S2LHUMA1
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［Discontinued］BSP603S2LHUMA1 N-Channel MOSFET, 5.2 A, 55 V OptiMOS, 3 + Tab-Pin SOT-223 Infineon BSP603S2LHUMA1 63-7560-84 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@-->
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63-7560-84 ［Discontinued］BSP603S2LHUMA1 N-Channel MOSFET, 5.2 A, 55 V OptiMOS, 3 + Tab-Pin SOT-223 Infineon BSP603S2LHUMA1
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特徴
- Infineon OptiMOS™ Power MOSFET Family. OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.. N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green package (lead free) Ultra low Rds(on)
Spec
- Quantity:1bag(10pieces)
- Channel Type : N
- Maximum Continuous Drain Current : 5.2 A
- Maximum Drain Source Voltage : 55 V
- Maximum Drain Source Resistance : 33 mΩ
- Maximum Gate Threshold Voltage : 2V
- Minimum Gate Threshold Voltage : 1.2V
- Maximum Gate Source Voltage : -20 V, +20 V
- Package Type : SOT-223
- Mounting Type : Surface Mount
- Transistor Configuration : Single
- Channel Mode : Enhancement
- Category : Power MOSFET
- Maximum Power Dissipation : 1.8 W
- Typical Turn-Off Delay Time : 28 ns
- CODE No.:462-2935
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Order No.
63-7560-84
型番
BSP603S2LHUMA1
Standard price
JPY: 3,600
USD: 22.40
Excange rate 1USD= 160.72JPY
Valid price in Japan
Quantity
1bag(10pieces)
Stock in Japan
-
63-7560-84 ［Discontinued］BSP603S2LHUMA1 N-Channel MOSFET, 5.2 A, 55 V OptiMOS, 3 + Tab-Pin SOT-223 Infineon BSP603S2LHUMA1
特徴
- Infineon OptiMOS™ Power MOSFET Family. OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.. N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green package (lead free) Ultra low Rds(on)
Spec
- Quantity:1bag(10pieces)
- Channel Type : N
- Maximum Continuous Drain Current : 5.2 A
- Maximum Drain Source Voltage : 55 V
- Maximum Drain Source Resistance : 33 mΩ
- Maximum Gate Threshold Voltage : 2V
- Minimum Gate Threshold Voltage : 1.2V
- Maximum Gate Source Voltage : -20 V, +20 V
- Package Type : SOT-223
- Mounting Type : Surface Mount
- Transistor Configuration : Single
- Channel Mode : Enhancement
- Category : Power MOSFET
- Maximum Power Dissipation : 1.8 W
- Typical Turn-Off Delay Time : 28 ns
- CODE No.:462-2935
| Order No. | 63-7560-84 | |
|---|---|---|
| 型番 | BSP603S2LHUMA1 | |
| Standard price |
JPY: 3,600
USD: 22.40
Excange rate 1USD= 160.72JPY
Valid price in Japan |
|
| Quantity | 1bag(10pieces) | |
|
|
||
| Stock in Japan | - | |