63-7503-06 BSP149H6327XTSA1 N-Channel MOSFET, 660 mA, 200 V Depletion SIPMOS, 3+Tab-Pin SOT-223 Infineon BSP149H6327XTSA1
Features
- Infineon SIPMOS® N-Channel MOSFETs
Spec
- Quantity:1set(1000pieces)
- Channel Type : N
- Maximum Continuous Drain Current : 660 mA
- Maximum Drain Source Voltage : 200 V
- Maximum Drain Source Resistance : 1.8 Ω
- Maximum Gate Threshold Voltage : 1V
- Minimum Gate Threshold Voltage : 2.1V
- Maximum Gate Source Voltage : -20 V, +20 V
- Package Type : SOT-223
- Mounting Type : Surface Mount
- Pin Count : 3 + Tab
- Channel Mode : Depletion
- Category : Small Signal
- Maximum Power Dissipation : 1.8 W
- Width : 3.5mm
- CODE No.:911-4808
| Order No. | 63-7503-06 | |
|---|---|---|
| Model No. | BSP149H6327XTSA1 | |
| JAN Code | 0000000000000 | |
| Standard price |
JPY: 120,000
USD: 835.60
Excange rate 1USD= 143.61JPY
Valid price in Japan |
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| Quantity | 1set(1000pieces) | |
| Stock in Japan |
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| Supplier Stock |
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