63-7353-58 ［Discontinued］BUZ30AHXKSA1 N-Channel MOSFET Transistor, 21 A, 200 V SIPMOS, 3-Pin TO-220 Infineon BUZ30AHXKSA1
Features
- Infineon SIPMOS® N-Channel MOSFETs
Spec
- Quantity:1set(50pieces)
- Channel Type : N
- Maximum Continuous Drain Current : 21 A
- Maximum Drain Source Voltage : 200 V
- Maximum Drain Source Resistance : 130 mΩ
- Maximum Gate Threshold Voltage : 4V
- Minimum Gate Threshold Voltage : 2.1V
- Maximum Gate Source Voltage : -20 V, +20 V
- Package Type : TO-220
- Mounting Type : Through Hole
- Pin Count : 3
- Channel Mode : Enhancement
- Category : Power MOSFET
- Maximum Power Dissipation : 125 W
- Minimum Operating Temperature : -55 °C
- CODE No.:911-4795
| Order No. | 63-7353-58 | |
|---|---|---|
| Model No. | BUZ30AHXKSA1 | |
| Standard price |
JPY: 6,950
USD: 43.60
Excange rate 1USD= 159.42JPY
Valid price in Japan |
|
| Quantity | 1set(50pieces) | |
|
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| Stock in Japan | - | |