63-7352-35 IXFN60N80P N-Channel MOSFET, 53 A, 800 V HiperFET, Polar, 4-Pin SOT-227B IXYS IXFN60N80P
Features
- N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series. N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS
Spec
- Quantity:1set(10pieces)
- Channel Type : N
- Maximum Continuous Drain Current : 53 A
- Maximum Drain Source Voltage : 800 V
- Maximum Drain Source Resistance : 140 mΩ
- Maximum Gate Threshold Voltage : 5V
- Maximum Gate Source Voltage : -30 V, +30 V
- Package Type : SOT-227B
- Mounting Type : Panel Mount
- Pin Count : 4
- Channel Mode : Enhancement
- Category : Power MOSFET
- Maximum Power Dissipation : 1.04 kW
- Typical Turn-On Delay Time : 36 ns
- CODE No.:168-4494
| Order No. | 63-7352-35 | |
|---|---|---|
| Model No. | IXFN60N80P | |
| Standard price |
JPY: 103,000
USD: 640.87
Excange rate 1USD= 160.72JPY
Valid price in Japan |
|
| Quantity | 1set(10pieces) | |
| Stock in Japan |
|
|
| Supplier Stock |
|
|