63-7352-33 IXFN82N60P N-Channel MOSFET, 72 A, 600 V HiperFET, Polar, 4-Pin SOT-227B IXYS IXFN82N60P
Features
- N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series. N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS
Spec
- Quantity:1set(10pieces)
- Channel Type : N
- Maximum Continuous Drain Current : 72 A
- Maximum Drain Source Voltage : 600 V
- Maximum Drain Source Resistance : 75 mΩ
- Maximum Gate Threshold Voltage : 5V
- Maximum Gate Source Voltage : -30 V, +30 V
- Package Type : SOT-227B
- Mounting Type : Panel Mount
- Pin Count : 4
- Channel Mode : Enhancement
- Category : Power MOSFET
- Maximum Power Dissipation : 1.04 kW
- Minimum Operating Temperature : -55 °C
- CODE No.:168-4484
| Order No. | 63-7352-33 | |
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| Model No. | IXFN82N60P | |
| Standard price |
JPY: 83,500
USD: 519.54
Excange rate 1USD= 160.72JPY
Valid price in Japan |
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| Quantity | 1set(10pieces) | |
| Stock in Japan |
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| Supplier Stock |
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