IXYS

63-7352-32 IXFN24N100 N-Channel MOSFET, 24 A, 1000 V HiperFET, 4-Pin SOT-227B IXYS IXFN24N100

Features

  • N-channel Power MOSFET, IXYS HiperFET™ Series

Spec

  • Quantity:1set(10pieces)
  • Channel Type : N
  • Maximum Continuous Drain Current : 24 A
  • Maximum Drain Source Voltage : 1000 V
  • Maximum Drain Source Resistance : 390 mΩ
  • Maximum Gate Threshold Voltage : 5.5V
  • Maximum Gate Source Voltage : -20 V, +20 V
  • Package Type : SOT-227B
  • Mounting Type : Panel Mount
  • Pin Count : 4
  • Channel Mode : Enhancement
  • Category : Power MOSFET
  • Maximum Power Dissipation : 568 W
  • Typical Turn-On Delay Time : 35 ns
  • CODE No.:146-1694
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Order No. 63-7352-32
Model No. IXFN24N100
Standard price JPY: 103,000 USD: 645.65
Excange rate 1USD= 159.53JPY
Valid price in Japan
Quantity 1set(10pieces)
Stock in Japan
Supplier Stock