IXYS

63-7352-29 IXFN36N100 N-Channel MOSFET, 36 A, 1000 V HiperFET, 4-Pin SOT-227B IXYS IXFN36N100

Features

  • N-channel Power MOSFET, IXYS HiperFET™ Series

Spec

  • Quantity:1set(10pieces)
  • Channel Type : N
  • Maximum Continuous Drain Current : 36 A
  • Maximum Drain Source Voltage : 1000 V
  • Maximum Drain Source Resistance : 240 mΩ
  • Maximum Gate Threshold Voltage : 5V
  • Maximum Gate Source Voltage : -20 V, +20 V
  • Package Type : SOT-227B
  • Mounting Type : Panel Mount
  • Pin Count : 4
  • Channel Mode : Enhancement
  • Category : Power MOSFET
  • Maximum Power Dissipation : 700 W
  • Typical Turn-On Delay Time : 41 ns
  • CODE No.:168-4473
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Order No. 63-7352-29
Model No. IXFN36N100
Standard price JPY: 180,000 USD: 1,119.96
Excange rate 1USD= 160.72JPY
Valid price in Japan
Quantity 1set(10pieces)
Stock in Japan
Supplier Stock