63-7038-13 ［Discontinued］BSC032NE2LSATMA1 N-Channel MOSFET, 84 A, 25 V OptiMOS, 8-Pin TDSON Infineon BSC032NE2LSATMA1
Features
- Infineon OptiMOS Power MOSFET Family
- OptiMOS products are packaged in a high-performance package for even the most challenging applications. This allows for maximum flexibility in limited space. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the next generation of stringent voltage regulation standards for computing applications.
- N Channel - Enhanced Mode On-Vehicle AEC Q101 Certified MSL1 Peak Reflow Up to 260 °C Operating Temperature of 175 °C Environmentally Friendly Product (Lead-free) Ultra Low Rds (on)
Spec
- Quantity:1bag(5pieces)
- Channel Type : N
- Maximum Continuous Drain Current : 84 A
- Maximum Drain Source Voltage : 25 V
- Maximum Drain Source Resistance : 4.8 mΩ
- Maximum Gate Threshold Voltage : 2V
- Minimum Gate Threshold Voltage : 1.2V
- Maximum Gate Source Voltage : +20 V
- Package Type : TDSON
- Mounting Type : Surface Mount
- Transistor Configuration : Single
- Channel Mode : Enhancement
- Category : Power MOSFET
- Maximum Power Dissipation : 37 W
- Minimum Operating Temperature : -55 °C
- CODE No.:133-9939
| Order No. | 63-7038-13 | |
|---|---|---|
| Model No. | BSC032NE2LSATMA1 | |
| Standard price |
JPY: 530
USD: 3.30
Excange rate 1USD= 160.72JPY
Valid price in Japan |
|
| Quantity | 1bag(5pieces) | |
|
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| Stock in Japan | - | |