63-7037-13 ［Discontinued］Infineon 1200V 40A, SiC Schottky Diode, 2+Tab-Pin TO-220 IDH16G120C5XKSA1 IDH16G120C5XKSA1
Features
- thinQ! Silicon Carbide (SiC) Schottky Diode, Infineon
- Infineon thinQ! The fifth generation uses new thin wafer technology in SiC Schottky barrier diodes to improve thermal properties. SiC Schottky diode devices have features for high-voltage power semiconductors, such as high breakdown field strength and thermal conductivity for higher efficiency levels. This latest generation is suitable for communications SMPS, high-end servers, UPS systems, motor drives, solar inverters, PC silver boxes, lighting applications and more.
- Reducing EMI
Spec
- Quantity:1set(500pieces)
- Maximum Continuous Forward Current : 40A
- Number of Elements per Chip : 1
- Peak Reverse Repetitive Voltage : 1200V
- Mounting Type : Through Hole
- Package Type : TO-220
- Diode Technology : SiC Schottky
- Pin Count : 2+Tab
- Maximum Forward Voltage Drop : 2.85V
- Peak Non-Repetitive Forward Surge Current : 140A
- CODE No.:133-8557
| Order No. | 63-7037-13 | |
|---|---|---|
| Model No. | IDH16G120C5XKSA1 | |
| Standard price |
JPY: 345,000
USD: 2,146.59
Excange rate 1USD= 160.72JPY
Valid price in Japan |
|
| Quantity | 1set(500pieces) | |
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| Stock in Japan | - | |