63-7036-92 [Discontinued]BSC0921NDIATMA1 Dual N-Channel MOSFET, 40 A, 30 V OptiMOS, 8-Pin TISON Infineon BSC0921NDIATMA1
Features
- Infineon OptiMOS Dual Power MOSFET
Spec
- Quantity:1set(5000pieces)
- Channel Type : N
- Maximum Continuous Drain Current : 40 A
- Maximum Drain Source Voltage : 30 V
- Maximum Drain Source Resistance : 7 mΩ
- Maximum Gate Threshold Voltage : 2V
- Minimum Gate Threshold Voltage : 1.2V
- Maximum Gate Source Voltage : +20 V
- Package Type : TISON
- Mounting Type : Surface Mount
- Pin Count : 8
- Channel Mode : Enhancement
- Category : Power MOSFET
- Maximum Power Dissipation : 2.5 W
- Number of Elements per Chip : 2
- CODE No.:133-6707
| Order No. | 63-7036-92 | |
|---|---|---|
| Model No. | BSC0921NDIATMA1 | |
| Standard price |
JPY: 473,000
USD: 2,964.96
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1set(5000pieces) | |
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| Stock in Japan | - | |
![[Discontinued]BSC0921NDIATMA1 Dual N-Channel MOSFET, 40 A, 30 V OptiMOS, 8-Pin TISON Infineon BSC0921NDIATMA1](https://aimg.as-1.co.jp/c/63/7036/92/63703692.jpg?v=03790be0f2ba82c1280907a7033cf49dabaaa7c1)