63-7032-55 [Discontinued]RQ3G100GNTB N-Channel MOSFET, 10 A, 40 V RQ3G100GN, 8-Pin HSMT ROHM RQ3G100GNTB
Features
- N-channel MOSFET transistor, ROHM
Spec
- Quantity:1bag(25pieces)
- Channel Type : N
- Maximum Continuous Drain Current : 10 A
- Maximum Drain Source Voltage : 40 V
- Maximum Drain Source Resistance : 18.3 mΩ
- Maximum Gate Threshold Voltage : 2.5V
- Minimum Gate Threshold Voltage : 1.2V
- Maximum Gate Source Voltage : -20 V, +20 V
- Package Type : HSMT
- Mounting Type : Surface Mount
- Pin Count : 8
- Channel Mode : Enhancement
- Category : Power MOSFET, Switching MOSFET
- Maximum Power Dissipation : 2 W
- Number of Elements per Chip : 1
- CODE No.:133-3295
| Order No. | 63-7032-55 | |
|---|---|---|
| Model No. | RQ3G100GNTB | |
| Standard price |
JPY: 940
USD: 5.85
Excange rate 1USD= 160.72JPY
Valid price in Japan |
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| Quantity | 1bag(25pieces) | |
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| Stock in Japan | - | |
![[Discontinued]RQ3G100GNTB N-Channel MOSFET, 10 A, 40 V RQ3G100GN, 8-Pin HSMT ROHM RQ3G100GNTB](https://aimg.as-1.co.jp/c/63/7032/55/63703255.jpg?v=03790be0f2ba82c1280907a7033cf49dabaaa7c1)