63-7032-54 ［Discontinued］RQ3E120GNTB N-Channel MOSFET, 12 A, 30 V RQ3E120GN, 8-Pin HSMT ROHM RQ3E120GNTB
Features
- N-channel MOSFET transistor, ROHM
Spec
- Quantity:1bag(25pieces)
- Channel Type : N
- Maximum Continuous Drain Current : 12 A
- Maximum Drain Source Voltage : 30 V
- Maximum Drain Source Resistance : 13.8 mΩ
- Maximum Gate Threshold Voltage : 2.5V
- Minimum Gate Threshold Voltage : 1.2V
- Maximum Gate Source Voltage : -20 V, +20 V
- Package Type : HSMT
- Mounting Type : Surface Mount
- Transistor Configuration : Single
- Channel Mode : Enhancement
- Category : Power MOSFET, Switching MOSFET
- Maximum Power Dissipation : 15 W
- Number of Elements per Chip : 1
- CODE No.:133-3294
| Order No. | 63-7032-54 | |
|---|---|---|
| Model No. | RQ3E120GNTB | |
| Standard price |
JPY: 1,060
USD: 6.65
Excange rate 1USD= 159.42JPY
Valid price in Japan |
|
| Quantity | 1bag(25pieces) | |
|
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| Stock in Japan | - | |