63-7032-53 ［Discontinued］RQ3E120ATTB P-Channel MOSFET, 39 A, 30 V RQ3E120AT, 8-Pin HSMT ROHM RQ3E120ATTB
Features
- P-channel MOSFET transistor, ROHM
Spec
- Quantity:1bag(10pieces)
- Channel Type : P
- Maximum Continuous Drain Current : 39 A
- Maximum Drain Source Voltage : 30 V
- Maximum Drain Source Resistance : 11.3 mΩ
- Maximum Gate Threshold Voltage : 2.5V
- Minimum Gate Threshold Voltage : 1V
- Maximum Gate Source Voltage : -20 V, +20 V
- Package Type : HSMT
- Mounting Type : Surface Mount
- Pin Count : 8
- Channel Mode : Enhancement
- Category : Power MOSFET, Switching MOSFET
- Maximum Power Dissipation : 20 W
- Number of Elements per Chip : 1
- CODE No.:133-3293
| Order No. | 63-7032-53 | |
|---|---|---|
| Model No. | RQ3E120ATTB | |
| Standard price |
JPY: 570
USD: 3.55
Excange rate 1USD= 160.72JPY
Valid price in Japan |
|
| Quantity | 1bag(10pieces) | |
|
||
| Stock in Japan | - | |