63-7032-52 ［Discontinued］RQ3E080GNTB N-Channel MOSFET, 18 A, 30 V RQ3E080GN, 8-Pin HSMT ROHM RQ3E080GNTB
Features
- N-channel MOSFET transistor, ROHM
Spec
- Quantity:1bag(25pieces)
- Channel Type : N
- Maximum Continuous Drain Current : 18 A
- Maximum Drain Source Voltage : 30 V
- Maximum Drain Source Resistance : 31.2 mΩ
- Maximum Gate Threshold Voltage : 2.5V
- Minimum Gate Threshold Voltage : 1.2V
- Maximum Gate Source Voltage : -20 V, +20 V
- Package Type : HSMT
- Mounting Type : Surface Mount
- Transistor Configuration : Single
- Channel Mode : Enhancement
- Category : Power MOSFET, Switching MOSFET
- Maximum Power Dissipation : 14 W
- Dimensions : 3.3 x 3.1 x 0.85mm
- CODE No.:133-3292
| Order No. | 63-7032-52 | |
|---|---|---|
| Model No. | RQ3E080GNTB | |
| Standard price |
JPY: 1,000
USD: 6.22
Excange rate 1USD= 160.72JPY
Valid price in Japan |
|
| Quantity | 1bag(25pieces) | |
|
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| Stock in Japan | - | |