63-7032-50 [Discontinued]RQ3E070BNTB N-Channel MOSFET, 7 A, 30 V RQ3E070BN, 8-Pin HSMT ROHM RQ3E070BNTB
Features
- N-channel MOSFET transistor, ROHM
Spec
- Quantity:1bag(25pieces)
- Channel Type : N
- Maximum Continuous Drain Current : 7 A
- Maximum Drain Source Voltage : 30 V
- Maximum Drain Source Resistance : 39 mΩ
- Maximum Gate Threshold Voltage : 2.5V
- Minimum Gate Threshold Voltage : 1V
- Maximum Gate Source Voltage : -20 V, +20 V
- Package Type : HSMT
- Mounting Type : Surface Mount
- Transistor Configuration : Single
- Channel Mode : Enhancement
- Category : Power MOSFET, Switching MOSFET
- Maximum Power Dissipation : 2 W
- Number of Elements per Chip : 1
- CODE No.:133-3290
| Order No. | 63-7032-50 | |
|---|---|---|
| Model No. | RQ3E070BNTB | |
| Standard price |
JPY: 930
USD: 5.79
Excange rate 1USD= 160.72JPY
Valid price in Japan |
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| Quantity | 1bag(25pieces) | |
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| Stock in Japan | - | |
![[Discontinued]RQ3E070BNTB N-Channel MOSFET, 7 A, 30 V RQ3E070BN, 8-Pin HSMT ROHM RQ3E070BNTB](https://aimg.as-1.co.jp/c/63/7032/50/63703250.jpg?v=03790be0f2ba82c1280907a7033cf49dabaaa7c1)