63-7020-79 ［Discontinued］IRLS4030TRLPBF N-Channel MOSFET, 180 A, 100 V HEXFET, 3-Pin D2PAK Infineon IRLS4030TRLPBF
Features
- N-Channel Power MOSFET 100 V, Infineon
- Infineon's discrete HEXFETR power MOSFET products include an N-channel device in a surface mount package with a lead. In addition, it includes a form factor for almost any board layout or thermal design challenge. Benchmarking resistance across the range reduces conductive loss, enabling optimal system efficiency.
Spec
- Quantity:1bag(2pieces)
- Channel Type : N
- Maximum Continuous Drain Current : 180 A
- Maximum Drain Source Voltage : 100 V
- Maximum Drain Source Resistance : 4.5 mΩ
- Maximum Gate Threshold Voltage : 2.5V
- Minimum Gate Threshold Voltage : 1V
- Maximum Gate Source Voltage : -16 V, +16 V
- Package Type : D2PAK (TO-263)
- Mounting Type : Surface Mount
- Pin Count : 3
- Channel Mode : Enhancement
- Category : Power MOSFET
- Maximum Power Dissipation : 370 W
- Forward Diode Voltage : 1.3V
- CODE No.:130-1029
| Order No. | 63-7020-79 | |
|---|---|---|
| Model No. | IRLS4030TRLPBF | |
| Standard price |
JPY: 870
USD: 5.41
Excange rate 1USD= 160.72JPY
Valid price in Japan |
|
| Quantity | 1bag(2pieces) | |
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| Stock in Japan | - | |