63-7020-78 ［Discontinued］IRLS3813TRLPBF N-Channel MOSFET, 247 A, 30 V HEXFET, 3-Pin D2PAK Infineon IRLS3813TRLPBF
Features
- N-Channel Power MOSFET 30 V, Infineon
- Infineon's discrete HEXFETR power MOSFET products include an N-channel device in a surface mount package with a lead. In addition, it includes a form factor for almost any board layout or thermal design challenge. Benchmarking resistance across the range reduces conductive loss, enabling optimal system efficiency.
Spec
- Quantity:1bag(5pieces)
- Channel Type : N
- Maximum Continuous Drain Current : 247 A
- Maximum Drain Source Voltage : 30 V
- Maximum Drain Source Resistance : 1.95 mΩ
- Maximum Gate Threshold Voltage : 2.35V
- Minimum Gate Threshold Voltage : 1.35V
- Maximum Gate Source Voltage : -20 V, +20 V
- Package Type : D2PAK (TO-263)
- Mounting Type : Surface Mount
- Pin Count : 3
- Channel Mode : Enhancement
- Category : Power MOSFET
- Maximum Power Dissipation : 195 W
- Minimum Operating Temperature : -55 °C
- CODE No.:130-1028
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Model No.Model No. class="init">
63-7020-78 ［Discontinued］IRLS3813TRLPBF N-Channel MOSFET, 247 A, 30 V HEXFET, 3-Pin D2PAK Infineon IRLS3813TRLPBF特徴
仕様
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