63-7020-77 IRLS3036TRLPBF N-Channel MOSFET, 270 A, 60 V HEXFET, 3-Pin D2PAK Infineon IRLS3036TRLPBF
Features
- N-Channel Power MOSFET 60 → 80 V, Infineon
- Infineon's discrete HEXFETR power MOSFET products include an N-channel device in a surface mount package with a lead. In addition, it includes a form factor for almost any board layout or thermal design challenge. Benchmarking resistance across the range reduces conductive loss, enabling optimal system efficiency.
Spec
- Quantity:1bag(2pieces)
- Channel Type : N
- Maximum Continuous Drain Current : 270 A
- Maximum Drain Source Voltage : 60 V
- Maximum Drain Source Resistance : 2.8 mΩ
- Maximum Gate Threshold Voltage : 2.5V
- Minimum Gate Threshold Voltage : 1V
- Maximum Gate Source Voltage : -16 V, +16 V
- Package Type : D2PAK (TO-263)
- Mounting Type : Surface Mount
- Pin Count : 3
- Channel Mode : Enhancement
- Category : Power MOSFET
- Maximum Power Dissipation : 380 W
- Typical Turn-Off Delay Time : 110 ns
- CODE No.:130-1027
| Order No. | 63-7020-77 | |
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| Model No. | IRLS3036TRLPBF | |
| Standard price |
JPY: 1,720
USD: 10.78
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1bag(2pieces) | |
| Stock in Japan |
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| Supplier Stock |
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