63-7020-73 ［Discontinued］IRLR3636TRLPBF N-Channel MOSFET, 99 A, 60 V HEXFET, 3-Pin DPAK Infineon IRLR3636TRLPBF
Features
- N-Channel Power MOSFET 60 → 80 V, Infineon
- Infineon's discrete HEXFETR power MOSFET products include an N-channel device in a surface mount package with a lead. In addition, it includes a form factor for almost any board layout or thermal design challenge. Benchmarking resistance across the range reduces conductive loss, enabling optimal system efficiency.
Spec
- Quantity:1bag(5pieces)
- Channel Type : N
- Maximum Continuous Drain Current : 99 A
- Maximum Drain Source Voltage : 60 V
- Maximum Drain Source Resistance : 8.3 mΩ
- Maximum Gate Threshold Voltage : 2.5V
- Minimum Gate Threshold Voltage : 1V
- Maximum Gate Source Voltage : -16 V, +16 V
- Package Type : DPAK (TO-252)
- Mounting Type : Surface Mount
- Pin Count : 3
- Channel Mode : Enhancement
- Category : Power MOSFET
- Maximum Power Dissipation : 143 W
- Typical Turn-Off Delay Time : 43 ns
- CODE No.:130-1022
| Order No. | 63-7020-73 | |
|---|---|---|
| Model No. | IRLR3636TRLPBF | |
| Standard price |
JPY: 930
USD: 5.83
Excange rate 1USD= 159.53JPY
Valid price in Japan |
|
| Quantity | 1bag(5pieces) | |
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| Stock in Japan | - | |