63-7020-71 ［Discontinued］IRLHS6276TRPBF Dual N-Channel MOSFET, 9.6 A, 20 V HEXFET, 6-Pin PQFN Infineon IRLHS6276TRPBF
Features
- N-Channel Power MOSFET 12 → 25 V, Infineon
- Infineon's discrete HEXFETR power MOSFET products include an N-channel device in a reed surface mount package and a form factor for almost any board layout or thermal design challenge. Benchmarking resistance across the range reduces conductive loss, enabling optimal system efficiency.
Spec
- Quantity:1bag(25pieces)
- Channel Type : N
- Maximum Continuous Drain Current : 9.6 A
- Maximum Drain Source Voltage : 20 V
- Maximum Drain Source Resistance : 62 mΩ
- Maximum Gate Threshold Voltage : 1.1V
- Minimum Gate Threshold Voltage : 0.5V
- Maximum Gate Source Voltage : -12 V, +12 V
- Package Type : PQFN
- Mounting Type : Surface Mount
- Pin Count : 6
- Channel Mode : Enhancement
- Category : Power MOSFET
- Maximum Power Dissipation : 6.6 W
- Minimum Operating Temperature : -55 °C
- CODE No.:130-1019
| Order No. | 63-7020-71 | |
|---|---|---|
| Model No. | IRLHS6276TRPBF | |
| Standard price |
JPY: 1,700
USD: 10.58
Excange rate 1USD= 160.72JPY
Valid price in Japan |
|
| Quantity | 1bag(25pieces) | |
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| Stock in Japan | - | |