63-7020-68 ［Discontinued］IRLH5030TRPBF N-Channel MOSFET, 88 A, 100 V HEXFET, 8-Pin PQFN Infineon IRLH5030TRPBF
Features
- N-Channel Power MOSFET 100 V, Infineon
- Infineon's discrete HEXFETR power MOSFET products include an N-channel device in a surface mount package with a lead. In addition, it includes a form factor for almost any board layout or thermal design challenge. Benchmarking resistance across the range reduces conductive loss, enabling optimal system efficiency.
Spec
- Quantity:1bag(5pieces)
- Channel Type : N
- Maximum Continuous Drain Current : 88 A
- Maximum Drain Source Voltage : 100 V
- Maximum Drain Source Resistance : 9.9 mΩ
- Maximum Gate Threshold Voltage : 2.5V
- Minimum Gate Threshold Voltage : 1V
- Maximum Gate Source Voltage : -16 V, +16 V
- Package Type : PQFN
- Mounting Type : Surface Mount
- Pin Count : 8
- Channel Mode : Enhancement
- Category : Power MOSFET
- Maximum Power Dissipation : 156 W
- Minimum Operating Temperature : -55 °C
- CODE No.:130-1016
| Order No. | 63-7020-68 | |
|---|---|---|
| Model No. | IRLH5030TRPBF | |
| Standard price |
JPY: 1,640
USD: 10.28
Excange rate 1USD= 159.53JPY
Valid price in Japan |
|
| Quantity | 1bag(5pieces) | |
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| Stock in Japan | - | |