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[Discontinued]IRLH5030TRPBF N-Channel MOSFET, 88 A, 100 V HEXFET, 8-Pin PQFN Infineon IRLH5030TRPBF 63-7020-68 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@-->

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  • 63-7020-68 [Discontinued]IRLH5030TRPBF N-Channel MOSFET, 88 A, 100 V HEXFET, 8-Pin PQFN Infineon IRLH5030TRPBF
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  • 63-7020-68 [Discontinued]IRLH5030TRPBF N-Channel MOSFET, 88 A, 100 V HEXFET, 8-Pin PQFN Infineon IRLH5030TRPBF
Infineon

63-7020-68 [Discontinued]IRLH5030TRPBF N-Channel MOSFET, 88 A, 100 V HEXFET, 8-Pin PQFN Infineon IRLH5030TRPBF

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  • [Discontinued]IRLH5030TRPBF N-Channel MOSFET, 88 A, 100 V HEXFET, 8-Pin PQFN Infineon IRLH5030TRPBF

Features

  • N-Channel Power MOSFET 100 V, Infineon
  • Infineon's discrete HEXFETR power MOSFET products include an N-channel device in a surface mount package with a lead. In addition, it includes a form factor for almost any board layout or thermal design challenge. Benchmarking resistance across the range reduces conductive loss, enabling optimal system efficiency.

Spec

  • Quantity:1bag(5pieces)
  • Channel Type : N
  • Maximum Continuous Drain Current : 88 A
  • Maximum Drain Source Voltage : 100 V
  • Maximum Drain Source Resistance : 9.9 mΩ
  • Maximum Gate Threshold Voltage : 2.5V
  • Minimum Gate Threshold Voltage : 1V
  • Maximum Gate Source Voltage : -16 V, +16 V
  • Package Type : PQFN
  • Mounting Type : Surface Mount
  • Pin Count : 8
  • Channel Mode : Enhancement
  • Category : Power MOSFET
  • Maximum Power Dissipation : 156 W
  • Minimum Operating Temperature : -55 °C
  • CODE No.:130-1016
  •  
Order No. 63-7020-68
Model No. IRLH5030TRPBF
Standard price JPY: 1,640 USD: 10.29
Excange rate 1USD= 159.42JPY
Valid price in Japan
Quantity 1bag(5pieces)
  Discontinued
Stock in Japan -

[$1][Discontinued]IRLH5030TRPBF N-Channel MOSFET, 88 A, 100 V HEXFET, 8-Pin PQFN Infineon[/$1]

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