63-7020-67 IRLB8314PBF N-Channel MOSFET, 171 A, 30 V HEXFET, 3-Pin TO-220AB Infineon IRLB8314PBF
Features
- N-Channel Power MOSFET 30 V, Infineon
- Infineon's discrete HEXFETR power MOSFET products include an N-channel device in a surface mount package with a lead. In addition, it includes a form factor for almost any board layout or thermal design challenge. Benchmarking resistance across the range reduces conductive loss, enabling optimal system efficiency.
Spec
- Quantity:1bag(10pieces)
- Channel Type : N
- Maximum Continuous Drain Current : 171 A
- Maximum Drain Source Voltage : 30 V
- Maximum Drain Source Resistance : 3.2 mΩ
- Maximum Gate Threshold Voltage : 2.2V
- Minimum Gate Threshold Voltage : 1.2V
- Maximum Gate Source Voltage : -20 V, +20 V
- Package Type : TO-220AB
- Mounting Type : Through Hole
- Pin Count : 3
- Channel Mode : Enhancement
- Category : Power MOSFET
- Maximum Power Dissipation : 125 W
- Minimum Operating Temperature : -55 °C
- CODE No.:130-1015
| Order No. | 63-7020-67 | |
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| Model No. | IRLB8314PBF | |
| Standard price |
JPY: 1,380
USD: 8.65
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1bag(10pieces) | |
| Stock in Japan |
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| Supplier Stock |
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