63-7020-65 ［Discontinued］IRL6372TRPBF Dual N-Channel MOSFET, 8.1 A, 30 V HEXFET, 8-Pin SOIC Infineon IRL6372TRPBF
Features
- Dual N-Channel Power MOSFETs Infineon
- Infineon dual power MOSFETs integrate two HEXFETR devices to provide a space-saving and cost-effective switching solution for high component density designs where substrate space is paramount. Various packaging options allow designers to choose a dual N-channel configuration.
Spec
- Quantity:1bag(25pieces)
- Channel Type : N
- Maximum Continuous Drain Current : 8.1 A
- Maximum Drain Source Voltage : 30 V
- Maximum Drain Source Resistance : 23 mΩ
- Maximum Gate Threshold Voltage : 1.1V
- Minimum Gate Threshold Voltage : 0.5V
- Maximum Gate Source Voltage : -12 V, +12 V
- Package Type : SOIC
- Mounting Type : Surface Mount
- Pin Count : 8
- Channel Mode : Enhancement
- Category : Power MOSFET
- Maximum Power Dissipation : 2 W
- Minimum Operating Temperature : -55 °C
- CODE No.:130-1013
| Order No. | 63-7020-65 | |
|---|---|---|
| Model No. | IRL6372TRPBF | |
| Standard price |
JPY: 2,190
USD: 13.63
Excange rate 1USD= 160.72JPY
Valid price in Japan |
|
| Quantity | 1bag(25pieces) | |
|
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| Stock in Japan | - | |