63-7020-64 [Discontinued]IRL6297SDTRPBF Dual N-Channel MOSFET, 15 A, 20 V DirectFET, HEXFET, 3+Tab-Pin SA Infineon IRL6297SDTRPBF
Features
- DirectFETR Power MOSFET, Infineon The DirectFETR power package uses surface-mounted power MOSFET packaging technology. The DirectFETR MOSFET is a solution that reduces the footprint designed for advanced switching applications while reducing the amount of energy loss.
- Industry's lowest on-resistance contained in the appropriate footprint Very low package resistance minimizes conductive loss Very efficient double-sided cooling significantly improves power density, cost and reliability. Low profile of only 0.7 mm
Spec
- Quantity:1bag(5pieces)
- Channel Type : N
- Maximum Continuous Drain Current : 15 A
- Maximum Drain Source Voltage : 20 V
- Maximum Drain Source Resistance : 6.9 mΩ
- Maximum Gate Threshold Voltage : 1.1V
- Minimum Gate Threshold Voltage : 0.5V
- Maximum Gate Source Voltage : -20 V, +20 V
- Package Type : SA
- Mounting Type : Surface Mount
- Pin Count : 3 + Tab
- Channel Mode : Enhancement
- Category : Power MOSFET
- Maximum Power Dissipation : 25 W
- Minimum Operating Temperature : -40 °C
- CODE No.:130-1012
| Order No. | 63-7020-64 | |
|---|---|---|
| Model No. | IRL6297SDTRPBF | |
| Standard price |
JPY: 650
USD: 4.07
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1bag(5pieces) | |
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| Stock in Japan | - | |
![[Discontinued]IRL6297SDTRPBF Dual N-Channel MOSFET, 15 A, 20 V DirectFET, HEXFET, 3+Tab-Pin SA Infineon IRL6297SDTRPBF](https://aimg.as-1.co.jp/c/63/7020/64/63702064.jpg?v=03790be0f2ba82c1280907a7033cf49dabaaa7c1)