63-7020-56 ［Discontinued］IRFS4227TRLPBF N-Channel MOSFET, 62 A, 200 V HEXFET, 3-Pin D2PAK Infineon IRFS4227TRLPBF
Features
- N-Channel Power MOSFET 150 → 600 V, Infineon
- Infineon's discrete HEXFETR power MOSFET products include an N-channel device in a reed surface mount package and a form factor for almost any board layout or thermal design challenge. Benchmarking resistance across the range reduces conductive loss, enabling optimal system efficiency.
Spec
- Quantity:1bag(2pieces)
- Channel Type : N
- Maximum Continuous Drain Current : 62 A
- Maximum Drain Source Voltage : 200 V
- Maximum Drain Source Resistance : 26 mΩ
- Maximum Gate Threshold Voltage : 5V
- Minimum Gate Threshold Voltage : 3V
- Maximum Gate Source Voltage : -30 V, +30 V
- Package Type : D2PAK (TO-263)
- Mounting Type : Surface Mount
- Pin Count : 3
- Channel Mode : Enhancement
- Category : Power MOSFET
- Maximum Power Dissipation : 330 W
- Minimum Operating Temperature : -40 °C
- CODE No.:130-1003
| Order No. | 63-7020-56 | |
|---|---|---|
| Model No. | IRFS4227TRLPBF | |
| Standard price |
JPY: 700
USD: 4.39
Excange rate 1USD= 159.53JPY
Valid price in Japan |
|
| Quantity | 1bag(2pieces) | |
|
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| Stock in Japan | - | |