63-7020-52 IRFS4010TRLPBF N-Channel MOSFET, 180 A, 100 V HEXFET, 3-Pin D2PAK Infineon IRFS4010TRLPBF
Features
- N-Channel Power MOSFET 100 V, Infineon
- Infineon's discrete HEXFETR power MOSFET products include an N-channel device in a surface mount package with a lead. In addition, it includes a form factor for almost any board layout or thermal design challenge. Benchmarking resistance across the range reduces conductive loss, enabling optimal system efficiency.
Spec
- Quantity:1bag(2pieces)
- Channel Type : N
- Maximum Continuous Drain Current : 180 A
- Maximum Drain Source Voltage : 100 V
- Maximum Drain Source Resistance : 4.7 mΩ
- Maximum Gate Threshold Voltage : 4V
- Minimum Gate Threshold Voltage : 2V
- Maximum Gate Source Voltage : -20 V, +20 V
- Package Type : D2PAK (TO-263)
- Mounting Type : Surface Mount
- Pin Count : 3
- Channel Mode : Enhancement
- Category : Power MOSFET
- Maximum Power Dissipation : 375 W
- Number of Elements per Chip : 1
- CODE No.:130-0999
| Order No. | 63-7020-52 | |
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| Model No. | IRFS4010TRLPBF | |
| Standard price |
JPY: 1,460
USD: 9.15
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1bag(2pieces) | |
| Stock in Japan |
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| Supplier Stock |
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