63-7020-51 IRFS4010TRL7PP N-Channel MOSFET, 190 A, 100 V HEXFET, 7 + Tab-Pin D2PAK Infineon IRFS4010TRL7PP
Features
- N-Channel Power MOSFET 100 V, Infineon
- Infineon's discrete HEXFETR power MOSFET products include an N-channel device in a surface mount package with a lead. In addition, it includes a form factor for almost any board layout or thermal design challenge. Benchmarking resistance across the range reduces conductive loss, enabling optimal system efficiency.
Spec
- Quantity:1bag(2pieces)
- Channel Type : N
- Maximum Continuous Drain Current : 190 A
- Maximum Drain Source Voltage : 100 V
- Maximum Drain Source Resistance : 4 mΩ
- Maximum Gate Threshold Voltage : 4V
- Minimum Gate Threshold Voltage : 2V
- Maximum Gate Source Voltage : -20 V, +20 V
- Package Type : D2PAK (TO-263)
- Mounting Type : Surface Mount
- Pin Count : 7 + Tab
- Channel Mode : Enhancement
- Category : Power MOSFET
- Maximum Power Dissipation : 380 W
- Length : 10.67mm
- CODE No.:130-0998
| Order No. | 63-7020-51 | |
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| Model No. | IRFS4010TRL7PP | |
| Standard price |
JPY: 2,090
USD: 13.00
Excange rate 1USD= 160.72JPY
Valid price in Japan |
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| Quantity | 1bag(2pieces) | |
| Stock in Japan |
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| Supplier Stock |
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