63-7020-47 IRFS3006TRL7PP N-Channel MOSFET, 293 A, 60 V HEXFET, 7 + Tab-Pin D2PAK Infineon IRFS3006TRL7PP
Features
- N-Channel Power MOSFET 60 → 80 V, Infineon
- Infineon's discrete HEXFETR power MOSFET products include an N-channel device in a surface mount package with a lead. In addition, it includes a form factor for almost any board layout or thermal design challenge. Benchmarking resistance across the range reduces conductive loss, enabling optimal system efficiency.
Spec
- Quantity:1bag(2pieces)
- Channel Type : N
- Maximum Continuous Drain Current : 293 A
- Maximum Drain Source Voltage : 60 V
- Maximum Drain Source Resistance : 2.1 mΩ
- Maximum Gate Threshold Voltage : 4V
- Minimum Gate Threshold Voltage : 2V
- Maximum Gate Source Voltage : -20 V, +20 V
- Package Type : D2PAK (TO-263)
- Mounting Type : Surface Mount
- Pin Count : 7 + Tab
- Channel Mode : Enhancement
- Category : Power MOSFET
- Maximum Power Dissipation : 375 W
- Forward Transconductance : 290S
- CODE No.:130-0993
| Order No. | 63-7020-47 | |
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| Model No. | IRFS3006TRL7PP | |
| Standard price |
JPY: 1,400
USD: 8.78
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1bag(2pieces) | |
| Stock in Japan |
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| Supplier Stock |
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