63-7020-42 [Discontinued]IRFP4127PBF N-Channel MOSFET, 75 A, 200 V HEXFET, 3-Pin TO-247AC Infineon IRFP4127PBF
Features
- N-Channel Power MOSFET 150 → 600 V, Infineon
- Infineon's discrete HEXFETR power MOSFET products include an N-channel device in a reed surface mount package and a form factor for almost any board layout or thermal design challenge. Benchmarking resistance across the range reduces conductive loss, enabling optimal system efficiency.
Spec
- Quantity:1bag(2pieces)
- Channel Type : N
- Maximum Continuous Drain Current : 75 A
- Maximum Drain Source Voltage : 200 V
- Maximum Drain Source Resistance : 21 mΩ
- Maximum Gate Threshold Voltage : 5V
- Minimum Gate Threshold Voltage : 3V
- Maximum Gate Source Voltage : -20 V, +20 V
- Package Type : TO-247AC
- Mounting Type : Through Hole
- Pin Count : 3
- Channel Mode : Enhancement
- Category : Power MOSFET
- Maximum Power Dissipation : 341 W
- Minimum Operating Temperature : -55 °C
- CODE No.:130-0987
| Order No. | 63-7020-42 | |
|---|---|---|
| Model No. | IRFP4127PBF | |
| Standard price |
JPY: 1,260
USD: 7.90
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1bag(2pieces) | |
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| Stock in Japan | - | |
![[Discontinued]IRFP4127PBF N-Channel MOSFET, 75 A, 200 V HEXFET, 3-Pin TO-247AC Infineon IRFP4127PBF](https://aimg.as-1.co.jp/c/63/7020/42/63702042.jpg?v=03790be0f2ba82c1280907a7033cf49dabaaa7c1)