63-7020-42 ［Discontinued］IRFP4127PBF N-Channel MOSFET, 75 A, 200 V HEXFET, 3-Pin TO-247AC Infineon IRFP4127PBF
Features
- N-Channel Power MOSFET 150 → 600 V, Infineon
- Infineon's discrete HEXFETR power MOSFET products include an N-channel device in a reed surface mount package and a form factor for almost any board layout or thermal design challenge. Benchmarking resistance across the range reduces conductive loss, enabling optimal system efficiency.
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［Discontinued］IRFP4127PBF N-Channel MOSFET, 75 A, 200 V HEXFET, 3-Pin TO-247AC Infineon IRFP4127PBF 63-7020-42 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@-->
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Infineon
63-7020-42 ［Discontinued］IRFP4127PBF N-Channel MOSFET, 75 A, 200 V HEXFET, 3-Pin TO-247AC Infineon IRFP4127PBF
-
特徴
- N-Channel Power MOSFET 150 → 600 V, Infineon
- Infineon's discrete HEXFETR power MOSFET products include an N-channel device in a reed surface mount package and a form factor for almost any board layout or thermal design challenge. Benchmarking resistance across the range reduces conductive loss, enabling optimal system efficiency.
仕様
- Quantity:1bag(2pieces)
- Channel Type : N
- Maximum Continuous Drain Current : 75 A
- Maximum Drain Source Voltage : 200 V
- Maximum Drain Source Resistance : 21 mΩ
- Maximum Gate Threshold Voltage : 5V
- Minimum Gate Threshold Voltage : 3V
- Maximum Gate Source Voltage : -20 V, +20 V
- Package Type : TO-247AC
- Mounting Type : Through Hole
- Pin Count : 3
- Channel Mode : Enhancement
- Category : Power MOSFET
- Maximum Power Dissipation : 341 W
- Minimum Operating Temperature : -55 °C
- CODE No.:130-0987
-
Order No.
63-7020-42
型番
IRFP4127PBF
標準価格
JPY: 1,260
USD: 7.90
Excange rate 1USD= 159.42JPY
Valid price in Japan
Quantity
1bag(2pieces)
![<!--@[ia-1]@-->取扱停止<!--@/[ia-1]@-->](/en/asone/img/usestop_en_US.png?v=03790be0f2ba82c1280907a7033cf49dabaaa7c1)
在庫数
-
63-7020-42 ［Discontinued］IRFP4127PBF N-Channel MOSFET, 75 A, 200 V HEXFET, 3-Pin TO-247AC Infineon IRFP4127PBF
特徴
- N-Channel Power MOSFET 150 → 600 V, Infineon
- Infineon's discrete HEXFETR power MOSFET products include an N-channel device in a reed surface mount package and a form factor for almost any board layout or thermal design challenge. Benchmarking resistance across the range reduces conductive loss, enabling optimal system efficiency.
仕様
- Quantity:1bag(2pieces)
- Channel Type : N
- Maximum Continuous Drain Current : 75 A
- Maximum Drain Source Voltage : 200 V
- Maximum Drain Source Resistance : 21 mΩ
- Maximum Gate Threshold Voltage : 5V
- Minimum Gate Threshold Voltage : 3V
- Maximum Gate Source Voltage : -20 V, +20 V
- Package Type : TO-247AC
- Mounting Type : Through Hole
- Pin Count : 3
- Channel Mode : Enhancement
- Category : Power MOSFET
- Maximum Power Dissipation : 341 W
- Minimum Operating Temperature : -55 °C
- CODE No.:130-0987
| Order No. | 63-7020-42 | |
|---|---|---|
| 型番 | IRFP4127PBF | |
| 標準価格 |
JPY: 1,260
USD: 7.90
Excange rate 1USD= 159.42JPY
Valid price in Japan |
|
| Quantity | 1bag(2pieces) | |
|
|
||
| 在庫数 | - | |