63-7020-41 [Discontinued]IRFHM9391TRPBF P-Channel MOSFET, 11 A, 30 V HEXFET, 8-Pin PQFN Infineon IRFHM9391TRPBF
Features
- N-Channel Power MOSFET 30 V, Infineon
- Infineon's discrete HEXFETR power MOSFET products include an N-channel device in a surface mount package with a lead. In addition, it includes a form factor for almost any board layout or thermal design challenge. Benchmarking resistance across the range reduces conductive loss, enabling optimal system efficiency.
Spec
- Quantity:1bag(25pieces)
- Channel Type : P
- Maximum Continuous Drain Current : 11 A
- Maximum Drain Source Voltage : 30 V
- Maximum Drain Source Resistance : 22.5 mΩ
- Maximum Gate Threshold Voltage : 2.4V
- Minimum Gate Threshold Voltage : 1.3V
- Maximum Gate Source Voltage : -25 V, +25 V
- Package Type : PQFN
- Mounting Type : Surface Mount
- Pin Count : 8
- Channel Mode : Enhancement
- Category : Power MOSFET
- Maximum Power Dissipation : 2.6 W
- Maximum Operating Temperature : +150 °C
- CODE No.:130-0986
| Order No. | 63-7020-41 | |
|---|---|---|
| Model No. | IRFHM9391TRPBF | |
| Standard price |
JPY: 1,720
USD: 10.70
Excange rate 1USD= 160.72JPY
Valid price in Japan |
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| Quantity | 1bag(25pieces) | |
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| Stock in Japan | - | |
![[Discontinued]IRFHM9391TRPBF P-Channel MOSFET, 11 A, 30 V HEXFET, 8-Pin PQFN Infineon IRFHM9391TRPBF](https://aimg.as-1.co.jp/c/63/7020/41/63702041.jpg?v=03790be0f2ba82c1280907a7033cf49dabaaa7c1)