63-7020-39 ［Discontinued］IRFH6200TRPBF N-Channel MOSFET, 100 A, 20 V HEXFET, 8-Pin PQFN Infineon IRFH6200TRPBF
Features
- N-Channel Power MOSFET 12 → 25 V, Infineon
- Infineon's discrete HEXFETR power MOSFET products include an N-channel device in a reed surface mount package and a form factor for almost any board layout or thermal design challenge. Benchmarking resistance across the range reduces conductive loss, enabling optimal system efficiency.
Spec
- Quantity:1bag(5pieces)
- Channel Type : N
- Maximum Continuous Drain Current : 100 A
- Maximum Drain Source Voltage : 20 V
- Maximum Drain Source Resistance : 1.5 mΩ
- Maximum Gate Threshold Voltage : 1.1V
- Minimum Gate Threshold Voltage : 0.5V
- Maximum Gate Source Voltage : -12 V, +12 V
- Package Type : PQFN
- Mounting Type : Surface Mount
- Pin Count : 8
- Channel Mode : Enhancement
- Category : Power MOSFET
- Maximum Power Dissipation : 156 W
- Width : 5mm
- CODE No.:130-0983
| Order No. | 63-7020-39 | |
|---|---|---|
| Model No. | IRFH6200TRPBF | |
| Standard price |
JPY: 890
USD: 5.54
Excange rate 1USD= 160.72JPY
Valid price in Japan |
|
| Quantity | 1bag(5pieces) | |
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| Stock in Japan | - | |