63-7020-36 ［Discontinued］IRFH5302DTRPBF N-Channel MOSFET, 100 A, 30 V HEXFET, 8-Pin PQFN Infineon IRFH5302DTRPBF
Features
- N-Channel Power MOSFET 30 V, Infineon
- Infineon's discrete HEXFETR power MOSFET products include an N-channel device in a surface mount package with a lead. In addition, it includes a form factor for almost any board layout or thermal design challenge. Benchmarking resistance across the range reduces conductive loss, enabling optimal system efficiency.
Spec
- Quantity:1bag(5pieces)
- Channel Type : N
- Maximum Continuous Drain Current : 100 A
- Maximum Drain Source Voltage : 30 V
- Maximum Drain Source Resistance : 3.7 mΩ
- Maximum Gate Threshold Voltage : 2.35V
- Minimum Gate Threshold Voltage : 1.35V
- Maximum Gate Source Voltage : -20 V, +20 V
- Package Type : PQFN
- Mounting Type : Surface Mount
- Pin Count : 8
- Channel Mode : Enhancement
- Category : Power MOSFET
- Maximum Power Dissipation : 104 W
- Typical Turn-Off Delay Time : 20 ns
- CODE No.:130-0980
| Order No. | 63-7020-36 | |
|---|---|---|
| Model No. | IRFH5302DTRPBF | |
| Standard price |
JPY: 1,540
USD: 9.65
Excange rate 1USD= 159.53JPY
Valid price in Japan |
|
| Quantity | 1bag(5pieces) | |
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| Stock in Japan | - | |