63-7020-34 [Discontinued]IRFH5215TRPBF N-Channel MOSFET, 27 A, 150 V HEXFET, 8-Pin PQFN Infineon IRFH5215TRPBF
FeaturesFeatures class="init">
[Discontinued]IRFH5215TRPBF N-Channel MOSFET, 27 A, 150 V HEXFET, 8-Pin PQFN Infineon IRFH5215TRPBF 63-7020-34 【AXEL GLOBAL】 アズワン
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Infineon
63-7020-34 [Discontinued]IRFH5215TRPBF N-Channel MOSFET, 27 A, 150 V HEXFET, 8-Pin PQFN Infineon IRFH5215TRPBF
特徴
- N-Channel Power MOSFET 150 → 600 V, Infineon
- Infineon's discrete HEXFETR power MOSFET products include an N-channel device in a reed surface mount package and a form factor for almost any board layout or thermal design challenge. Benchmarking resistance across the range reduces conductive loss, enabling optimal system efficiency.
Spec
- Quantity:1bag(5pieces)
- Channel Type : N
- Maximum Continuous Drain Current : 27 A
- Maximum Drain Source Voltage : 150 V
- Maximum Drain Source Resistance : 58 mΩ
- Maximum Gate Threshold Voltage : 5V
- Minimum Gate Threshold Voltage : 3V
- Maximum Gate Source Voltage : -20 V, +20 V
- Package Type : PQFN
- Mounting Type : Surface Mount
- Pin Count : 8
- Channel Mode : Enhancement
- Category : Power MOSFET
- Maximum Power Dissipation : 104 W
- Maximum Operating Temperature : +150 °C
- CODE No.:130-0978
-
Order No.Order No.ss="init">
[Discontinued]IRFH5215TRPBF N-Channel MOSFET, 27 A, 150 V HEXFET, 8-Pin PQFN Infineon IRFH5215TRPBF 63-7020-34 【AXEL GLOBAL】 アズワン
Contact us
Infineon
63-7020-34 [Discontinued]IRFH5215TRPBF N-Channel MOSFET, 27 A, 150 V HEXFET, 8-Pin PQFN Infineon IRFH5215TRPBF
特徴
- N-Channel Power MOSFET 150 → 600 V, Infineon
- Infineon's discrete HEXFETR power MOSFET products include an N-channel device in a reed surface mount package and a form factor for almost any board layout or thermal design challenge. Benchmarking resistance across the range reduces conductive loss, enabling optimal system efficiency.
仕様
- Quantity:1bag(5pieces)
- Channel Type : N
- Maximum Continuous Drain Current : 27 A
- Maximum Drain Source Voltage : 150 V
- Maximum Drain Source Resistance : 58 mΩ
- Maximum Gate Threshold Voltage : 5V
- Minimum Gate Threshold Voltage : 3V
- Maximum Gate Source Voltage : -20 V, +20 V
- Package Type : PQFN
- Mounting Type : Surface Mount
- Pin Count : 8
- Channel Mode : Enhancement
- Category : Power MOSFET
- Maximum Power Dissipation : 104 W
- Maximum Operating Temperature : +150 °C
- CODE No.:130-0978
-
アズワン品番
63-7020-34
型番
IRFH5215TRPBF
標準価格
JPY: 940
USD: 5.90
Excange rate 1USD= 159.42JPY
Valid price in Japan
Quantity
1bag(5pieces)
在庫数
-
63-7020-34 [Discontinued]IRFH5215TRPBF N-Channel MOSFET, 27 A, 150 V HEXFET, 8-Pin PQFN Infineon IRFH5215TRPBF
特徴
- N-Channel Power MOSFET 150 → 600 V, Infineon
- Infineon's discrete HEXFETR power MOSFET products include an N-channel device in a reed surface mount package and a form factor for almost any board layout or thermal design challenge. Benchmarking resistance across the range reduces conductive loss, enabling optimal system efficiency.
Spec
- Quantity:1bag(5pieces)
- Channel Type : N
- Maximum Continuous Drain Current : 27 A
- Maximum Drain Source Voltage : 150 V
- Maximum Drain Source Resistance : 58 mΩ
- Maximum Gate Threshold Voltage : 5V
- Minimum Gate Threshold Voltage : 3V
- Maximum Gate Source Voltage : -20 V, +20 V
- Package Type : PQFN
- Mounting Type : Surface Mount
- Pin Count : 8
- Channel Mode : Enhancement
- Category : Power MOSFET
- Maximum Power Dissipation : 104 W
- Maximum Operating Temperature : +150 °C
- CODE No.:130-0978
Order No.Order No.ss="init">
63-7020-34 [Discontinued]IRFH5215TRPBF N-Channel MOSFET, 27 A, 150 V HEXFET, 8-Pin PQFN Infineon IRFH5215TRPBF特徴
仕様
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![[Discontinued]IRFH5215TRPBF N-Channel MOSFET, 27 A, 150 V HEXFET, 8-Pin PQFN Infineon IRFH5215TRPBF](https://aimg.as-1.co.jp/c/63/7020/34/63702034.jpg?v=03790be0f2ba82c1280907a7033cf49dabaaa7c1)