63-7020-34 ［Discontinued］IRFH5215TRPBF N-Channel MOSFET, 27 A, 150 V HEXFET, 8-Pin PQFN Infineon IRFH5215TRPBF
Features
- N-Channel Power MOSFET 150 → 600 V, Infineon
- Infineon's discrete HEXFETR power MOSFET products include an N-channel device in a reed surface mount package and a form factor for almost any board layout or thermal design challenge. Benchmarking resistance across the range reduces conductive loss, enabling optimal system efficiency.
Spec
- Quantity:1bag(5pieces)
- Channel Type : N
- Maximum Continuous Drain Current : 27 A
- Maximum Drain Source Voltage : 150 V
- Maximum Drain Source Resistance : 58 mΩ
- Maximum Gate Threshold Voltage : 5V
- Minimum Gate Threshold Voltage : 3V
- Maximum Gate Source Voltage : -20 V, +20 V
- Package Type : PQFN
- Mounting Type : Surface Mount
- Pin Count : 8
- Channel Mode : Enhancement
- Category : Power MOSFET
- Maximum Power Dissipation : 104 W
- Maximum Operating Temperature : +150 °C
- CODE No.:130-0978
| Order No. | 63-7020-34 | |
|---|---|---|
| Model No. | IRFH5215TRPBF | |
| Standard price |
JPY: 940
USD: 5.89
Excange rate 1USD= 159.53JPY
Valid price in Japan |
|
| Quantity | 1bag(5pieces) | |
|
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| Stock in Japan | - | |