63-7020-33　IRFH5210TRPBF N-Channel MOSFET, 10 A, 100 V HEXFET, 8-Pin PQFN Infineon　IRFH5210TRPBF

Features

N-Channel Power MOSFET 100 V, Infineon
Infineon's discrete HEXFETR power MOSFET products include an N-channel device in a surface mount package with a lead.　In addition, it includes a form factor for almost any board layout or thermal design challenge.　Benchmarking resistance across the range reduces conductive loss, enabling optimal system efficiency.

Spec

Quantity:1bag(5pieces)
Channel Type : N
Maximum Continuous Drain Current : 10 A
Maximum Drain Source Voltage : 100 V
Maximum Drain Source Resistance : 14.9 mΩ
Maximum Gate Threshold Voltage : 4V
Minimum Gate Threshold Voltage : 2V
Maximum Gate Source Voltage : -20 V, +20 V
Package Type : PQFN
Mounting Type : Surface Mount
Pin Count : 8
Channel Mode : Enhancement
Category : Power MOSFET
Maximum Power Dissipation : 104 W
Typical Gate Charge @ Vgs : 40 nC @ 10 V
CODE No.:130-0977

Order No.	63-7020-33
Model No.	IRFH5210TRPBF
Standard price	JPY: 1,730 USD: 10.76 Excange rate 1USD= 160.72JPY Valid price in Japan
Quantity	1bag(5pieces)
Stock in Japan
Supplier Stock

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