63-7020-33 IRFH5210TRPBF N-Channel MOSFET, 10 A, 100 V HEXFET, 8-Pin PQFN Infineon IRFH5210TRPBF
Features
- N-Channel Power MOSFET 100 V, Infineon
- Infineon's discrete HEXFETR power MOSFET products include an N-channel device in a surface mount package with a lead. In addition, it includes a form factor for almost any board layout or thermal design challenge. Benchmarking resistance across the range reduces conductive loss, enabling optimal system efficiency.
Spec
- Quantity:1bag(5pieces)
- Channel Type : N
- Maximum Continuous Drain Current : 10 A
- Maximum Drain Source Voltage : 100 V
- Maximum Drain Source Resistance : 14.9 mΩ
- Maximum Gate Threshold Voltage : 4V
- Minimum Gate Threshold Voltage : 2V
- Maximum Gate Source Voltage : -20 V, +20 V
- Package Type : PQFN
- Mounting Type : Surface Mount
- Pin Count : 8
- Channel Mode : Enhancement
- Category : Power MOSFET
- Maximum Power Dissipation : 104 W
- Typical Gate Charge @ Vgs : 40 nC @ 10 V
- CODE No.:130-0977
| Order No. | 63-7020-33 | |
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| Model No. | IRFH5210TRPBF | |
| Standard price |
JPY: 1,730
USD: 10.84
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1bag(5pieces) | |
| Stock in Japan |
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| Supplier Stock |
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