63-7020-31 IRFH5015TRPBF N-Channel MOSFET, 44 A, 150 V HEXFET, 8-Pin PQFN Infineon IRFH5015TRPBF
Features
- N-Channel Power MOSFET 150 → 600 V, Infineon
- Infineon's discrete HEXFETR power MOSFET products include an N-channel device in a reed surface mount package and a form factor for almost any board layout or thermal design challenge. Benchmarking resistance across the range reduces conductive loss, enabling optimal system efficiency.
Spec
- Quantity:1bag(5pieces)
- Channel Type : N
- Maximum Continuous Drain Current : 44 A
- Maximum Drain Source Voltage : 150 V
- Maximum Drain Source Resistance : 31 mΩ
- Maximum Gate Threshold Voltage : 5V
- Minimum Gate Threshold Voltage : 3V
- Maximum Gate Source Voltage : -20 V, +20 V
- Package Type : PQFN
- Mounting Type : Surface Mount
- Pin Count : 8
- Channel Mode : Enhancement
- Category : Power MOSFET
- Maximum Power Dissipation : 156 W
- Forward Transconductance : 38S
- CODE No.:130-0975
| Order No. | 63-7020-31 | |
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| Model No. | IRFH5015TRPBF | |
| Standard price |
JPY: 1,080
USD: 6.77
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1bag(5pieces) | |
| Stock in Japan |
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| Supplier Stock |
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