63-7020-30 [Discontinued]IRFH5007TRPBF N-Channel MOSFET, 100 A, 75 V HEXFET, 8-Pin PQFN Infineon IRFH5007TRPBF
Features
- N-Channel Power MOSFET 60 → 80 V, Infineon
- Infineon's discrete HEXFETR power MOSFET products include an N-channel device in a surface mount package with a lead. In addition, it includes a form factor for almost any board layout or thermal design challenge. Benchmarking resistance across the range reduces conductive loss, enabling optimal system efficiency.
Spec
- Quantity:1bag(5pieces)
- Channel Type : N
- Maximum Continuous Drain Current : 100 A
- Maximum Drain Source Voltage : 75 V
- Maximum Drain Source Resistance : 5.9 mΩ
- Maximum Gate Threshold Voltage : 4V
- Minimum Gate Threshold Voltage : 2V
- Maximum Gate Source Voltage : -20 V, +20 V
- Package Type : PQFN
- Mounting Type : Surface Mount
- Pin Count : 8
- Channel Mode : Enhancement
- Category : Power MOSFET
- Maximum Power Dissipation : 156 W
- Typical Turn-Off Delay Time : 30 ns
- CODE No.:130-0974
| Order No. | 63-7020-30 | |
|---|---|---|
| Model No. | IRFH5007TRPBF | |
| Standard price |
JPY: 1,490
USD: 9.34
Excange rate 1USD= 159.53JPY
Valid price in Japan |
|
| Quantity | 1bag(5pieces) | |
|
|
||
| Stock in Japan | - | |
![[Discontinued]IRFH5007TRPBF N-Channel MOSFET, 100 A, 75 V HEXFET, 8-Pin PQFN Infineon IRFH5007TRPBF](https://aimg.as-1.co.jp/c/63/7020/30/63702030.jpg?v=03790be0f2ba82c1280907a7033cf49dabaaa7c1)