63-7020-29 IRFH5006TRPBF N-Channel MOSFET, 100 A, 60 V HEXFET, 8-Pin PQFN Infineon IRFH5006TRPBF
Features
- N-Channel Power MOSFET 60 → 80 V, Infineon
- Infineon's discrete HEXFETR power MOSFET products include an N-channel device in a surface mount package with a lead. In addition, it includes a form factor for almost any board layout or thermal design challenge. Benchmarking resistance across the range reduces conductive loss, enabling optimal system efficiency.
Spec
- Quantity:1bag(5pieces)
- Channel Type : N
- Maximum Continuous Drain Current : 100 A
- Maximum Drain Source Voltage : 60 V
- Maximum Drain Source Resistance : 4.1 mΩ
- Maximum Gate Threshold Voltage : 4V
- Minimum Gate Threshold Voltage : 2V
- Maximum Gate Source Voltage : -20 V, +20 V
- Package Type : PQFN
- Mounting Type : Surface Mount
- Pin Count : 8
- Channel Mode : Enhancement
- Category : Power MOSFET
- Maximum Power Dissipation : 156 W
- Typical Turn-On Delay Time : 9.6 ns
- CODE No.:130-0973
| Order No. | 63-7020-29 | |
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| Model No. | IRFH5006TRPBF | |
| Standard price |
JPY: 2,210
USD: 13.85
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1bag(5pieces) | |
| Stock in Japan |
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| Supplier Stock |
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