63-7020-28 [Discontinued]IRF9392TRPBF P-Channel MOSFET, 9.8 A, 30 V HEXFET, 8-Pin SOIC Infineon IRF9392TRPBF
Features
- N-Channel Power MOSFET 30 V, Infineon
- Infineon's discrete HEXFETR power MOSFET products include an N-channel device in a surface mount package with a lead. In addition, it includes a form factor for almost any board layout or thermal design challenge. Benchmarking resistance across the range reduces conductive loss, enabling optimal system efficiency.
Spec
- Quantity:1bag(25pieces)
- Channel Type : P
- Maximum Continuous Drain Current : 9.8 A
- Maximum Drain Source Voltage : 30 V
- Maximum Drain Source Resistance : 17.5 mΩ
- Maximum Gate Threshold Voltage : 2.4V
- Minimum Gate Threshold Voltage : 1.3V
- Maximum Gate Source Voltage : -25 V, +25 V
- Package Type : SOIC
- Mounting Type : Surface Mount
- Pin Count : 8
- Channel Mode : Enhancement
- Category : Power MOSFET
- Maximum Power Dissipation : 2.5 W
- Minimum Operating Temperature : -55 °C
- CODE No.:130-0972
| Order No. | 63-7020-28 | |
|---|---|---|
| Model No. | IRF9392TRPBF | |
| Standard price |
JPY: 1,560
USD: 9.78
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1bag(25pieces) | |
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| Stock in Japan | - | |
![[Discontinued]IRF9392TRPBF P-Channel MOSFET, 9.8 A, 30 V HEXFET, 8-Pin SOIC Infineon IRF9392TRPBF](https://aimg.as-1.co.jp/c/63/7020/28/63702028.jpg?v=03790be0f2ba82c1280907a7033cf49dabaaa7c1)