63-7020-27 IRF9362TRPBF Dual P-Channel MOSFET, 8 A, 30 V HEXFET, 8-Pin SOIC Infineon IRF9362TRPBF
Features
- Dual P Channel Power MOSFET, Infineon
- The Infineon dual power MOSFET integrates two HEXFETR devices to provide a space-saving, cost-effective switching solution for high component density designs where substrate space is paramount. Various packaging options are available, allowing designers to choose a dual P-channel configuration.
Spec
- Quantity:1bag(25pieces)
- Channel Type : P
- Maximum Continuous Drain Current : 8 A
- Maximum Drain Source Voltage : 30 V
- Maximum Drain Source Resistance : 32 mΩ
- Maximum Gate Threshold Voltage : 2.4V
- Minimum Gate Threshold Voltage : 1.3V
- Maximum Gate Source Voltage : -20 V, +20 V
- Package Type : SOIC
- Mounting Type : Surface Mount
- Pin Count : 8
- Channel Mode : Enhancement
- Category : Power MOSFET
- Maximum Power Dissipation : 2 W
- Number of Elements per Chip : 2
- CODE No.:130-0970
| Order No. | 63-7020-27 | |
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| Model No. | IRF9362TRPBF | |
| Standard price |
JPY: 3,980
USD: 24.95
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1bag(25pieces) | |
| Stock in Japan |
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| Supplier Stock |
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