63-7020-26 IRF9335TRPBF P-Channel MOSFET, 5.4 A, 30 V HEXFET, 8-Pin SOIC Infineon IRF9335TRPBF
Features
- P Channel Power MOSFET 30 V, Infineon
- Infineon's discrete HEXFETR power MOSFET products include a P channel device in a reed surface mount package and a form factor for almost any board layout or thermal design challenge. Benchmarking resistance across the range reduces conductive loss, enabling optimal system efficiency.
Spec
- Quantity:1bag(25pieces)
- Channel Type : P
- Maximum Continuous Drain Current : 5.4 A
- Maximum Drain Source Voltage : 30 V
- Maximum Drain Source Resistance : 110 mΩ
- Maximum Gate Threshold Voltage : 2.4V
- Minimum Gate Threshold Voltage : 1.3V
- Maximum Gate Source Voltage : -20 V, +20 V
- Package Type : SOIC
- Mounting Type : Surface Mount
- Pin Count : 8
- Channel Mode : Enhancement
- Category : Power MOSFET
- Maximum Power Dissipation : 2.5 W
- Number of Elements per Chip : 1
- CODE No.:130-0969
| Order No. | 63-7020-26 | |
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| Model No. | IRF9335TRPBF | |
| Standard price |
JPY: 1,430
USD: 8.96
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1bag(25pieces) | |
| Stock in Japan |
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| Supplier Stock |
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