63-7020-24 IRF8788TRPBF N-Channel MOSFET, 24 A, 30 V HEXFET, 8-Pin SOIC Infineon IRF8788TRPBF
Features
- N-Channel Power MOSFET 30 V, Infineon
- Infineon's discrete HEXFETR power MOSFET products include an N-channel device in a surface mount package with a lead. In addition, it includes a form factor for almost any board layout or thermal design challenge. Benchmarking resistance across the range reduces conductive loss, enabling optimal system efficiency.
Spec
- Quantity:1bag(10pieces)
- Channel Type : N
- Maximum Continuous Drain Current : 24 A
- Maximum Drain Source Voltage : 30 V
- Maximum Drain Source Resistance : 3.8 mΩ
- Maximum Gate Threshold Voltage : 2.35V
- Minimum Gate Threshold Voltage : 1.35V
- Maximum Gate Source Voltage : -20 V, +20 V
- Package Type : SOIC
- Mounting Type : Surface Mount
- Pin Count : 8
- Channel Mode : Enhancement
- Category : Power MOSFET
- Maximum Power Dissipation : 2.5 W
- Minimum Operating Temperature : -55 °C
- CODE No.:130-0967
| Order No. | 63-7020-24 | |
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| Model No. | IRF8788TRPBF | |
| Standard price |
JPY: 1,230
USD: 7.71
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1bag(10pieces) | |
| Stock in Japan |
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| Supplier Stock |
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