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63-7020-24 IRF8788TRPBF N-Channel MOSFET, 24 A, 30 V HEXFET, 8-Pin SOIC Infineon IRF8788TRPBF 【AXEL GLOBAL】 アズワン
取扱点数300万点
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63-7020-24 IRF8788TRPBF N-Channel MOSFET, 24 A, 30 V HEXFET, 8-Pin SOIC Infineon IRF8788TRPBF 【AXEL GLOBAL】 アズワン
取扱点数300万点
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AXEL GLOBAL
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63-7020-24 IRF8788TRPBF N-Channel MOSFET, 24 A, 30 V HEXFET, 8-Pin SOIC Infineon IRF8788TRPBF
AXEL GLOBAL
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63-7020-24 IRF8788TRPBF N-Channel MOSFET, 24 A, 30 V HEXFET, 8-Pin SOIC Infineon IRF8788TRPBF
Infineon
63-7020-24 IRF8788TRPBF N-Channel MOSFET, 24 A, 30 V HEXFET, 8-Pin SOIC Infineon IRF8788TRPBF
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Features
N-Channel Power MOSFET 30 V, Infineon
Infineon's discrete HEXFETR power MOSFET products include an N-channel device in a surface mount package with a lead. In addition, it includes a form factor for almost any board layout or thermal design challenge. Benchmarking resistance across the range reduces conductive loss, enabling optimal system efficiency.
SpecSpec class="init">
63-7020-24 IRF8788TRPBF N-Channel MOSFET, 24 A, 30 V HEXFET, 8-Pin SOIC Infineon IRF8788TRPBF 【AXEL GLOBAL】 アズワン
取扱点数300万点
How to use
English
China
Indonesia
Korea
Thailand
Vietnam
Contact us
すべてのカテゴリ
すべてのカテゴリ
Lab Instruments & Supplies
Factory Work Tools & Supplies
Clean Room/Anti Static Supplies
Medical, Nursing & Care Products
Food Sanitation & Inspection
Office Supplies and Stationery
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Specially Ordered Item
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Quote
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AXEL GLOBAL
カテゴリ一覧
Lab Instruments & Supplies
Electronic/Electrical Parts and Controll Equipments
Electronics Components, Power & Connectors
Semiconductors
Discrete Semiconductors
63-7020-24 IRF8788TRPBF N-Channel MOSFET, 24 A, 30 V HEXFET, 8-Pin SOIC Infineon IRF8788TRPBF
AXEL GLOBAL
カテゴリ一覧
Lab Instruments & Supplies
Electronic/Electrical Parts and Controll Equipments
RS Components
63-7020-24 IRF8788TRPBF N-Channel MOSFET, 24 A, 30 V HEXFET, 8-Pin SOIC Infineon IRF8788TRPBF
Infineon
63-7020-24 IRF8788TRPBF N-Channel MOSFET, 24 A, 30 V HEXFET, 8-Pin SOIC Infineon IRF8788TRPBF
印刷
PDF
特徴
N-Channel Power MOSFET 30 V, Infineon
Infineon's discrete HEXFETR power MOSFET products include an N-channel device in a surface mount package with a lead. In addition, it includes a form factor for almost any board layout or thermal design challenge. Benchmarking resistance across the range reduces conductive loss, enabling optimal system efficiency.
Spec
Quantity:1bag(10pieces)
Channel Type : N
Maximum Continuous Drain Current : 24 A
Maximum Drain Source Voltage : 30 V
Maximum Drain Source Resistance : 3.8 mΩ
Maximum Gate Threshold Voltage : 2.35V
Minimum Gate Threshold Voltage : 1.35V
Maximum Gate Source Voltage : -20 V, +20 V
Package Type : SOIC
Mounting Type : Surface Mount
Pin Count : 8
Channel Mode : Enhancement
Category : Power MOSFET
Maximum Power Dissipation : 2.5 W
Minimum Operating Temperature : -55 °C
CODE No.:130-0967
Order No.Order No.ss="init">
63-7020-24 IRF8788TRPBF N-Channel MOSFET, 24 A, 30 V HEXFET, 8-Pin SOIC Infineon IRF8788TRPBF 【AXEL GLOBAL】 アズワン
取扱点数300万点
How to use
English
China
Indonesia
Korea
Thailand
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すべてのカテゴリ
すべてのカテゴリ
Lab Instruments & Supplies
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Food Sanitation & Inspection
Office Supplies and Stationery
Emergency Supplies
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Specially Ordered Item
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Quote
Other Requests
AXEL GLOBAL
カテゴリ一覧
Lab Instruments & Supplies
Electronic/Electrical Parts and Controll Equipments
Electronics Components, Power & Connectors
Semiconductors
Discrete Semiconductors
63-7020-24 IRF8788TRPBF N-Channel MOSFET, 24 A, 30 V HEXFET, 8-Pin SOIC Infineon IRF8788TRPBF
AXEL GLOBAL
カテゴリ一覧
Lab Instruments & Supplies
Electronic/Electrical Parts and Controll Equipments
RS Components
63-7020-24 IRF8788TRPBF N-Channel MOSFET, 24 A, 30 V HEXFET, 8-Pin SOIC Infineon IRF8788TRPBF
Infineon
63-7020-24 IRF8788TRPBF N-Channel MOSFET, 24 A, 30 V HEXFET, 8-Pin SOIC Infineon IRF8788TRPBF
印刷
PDF
特徴
N-Channel Power MOSFET 30 V, Infineon
Infineon's discrete HEXFETR power MOSFET products include an N-channel device in a surface mount package with a lead. In addition, it includes a form factor for almost any board layout or thermal design challenge. Benchmarking resistance across the range reduces conductive loss, enabling optimal system efficiency.
仕様
Quantity:1bag(10pieces)
Channel Type : N
Maximum Continuous Drain Current : 24 A
Maximum Drain Source Voltage : 30 V
Maximum Drain Source Resistance : 3.8 mΩ
Maximum Gate Threshold Voltage : 2.35V
Minimum Gate Threshold Voltage : 1.35V
Maximum Gate Source Voltage : -20 V, +20 V
Package Type : SOIC
Mounting Type : Surface Mount
Pin Count : 8
Channel Mode : Enhancement
Category : Power MOSFET
Maximum Power Dissipation : 2.5 W
Minimum Operating Temperature : -55 °C
CODE No.:130-0967
アズワン品番
63-7020-24
Model No.
IRF8788TRPBF
標準価格
JPY:
1,520
USD:
9.54
Excange rate 1USD= 159.42JPY
Valid price in Japan
Quantity
1bag(10pieces)
Stock in Japan
Supplier StockSupplier Stock"init">
63-7020-24 IRF8788TRPBF N-Channel MOSFET, 24 A, 30 V HEXFET, 8-Pin SOIC Infineon IRF8788TRPBF 【AXEL GLOBAL】 アズワン
取扱点数300万点
How to use
English
China
Indonesia
Korea
Thailand
Vietnam
Contact us
すべてのカテゴリ
すべてのカテゴリ
Lab Instruments & Supplies
Factory Work Tools & Supplies
Clean Room/Anti Static Supplies
Medical, Nursing & Care Products
Food Sanitation & Inspection
Office Supplies and Stationery
Emergency Supplies
Education, Learning Supplies
Specially Ordered Item
Featured Products
Contact us
Quote
Other Requests
AXEL GLOBAL
カテゴリ一覧
Lab Instruments & Supplies
Electronic/Electrical Parts and Controll Equipments
Electronics Components, Power & Connectors
Semiconductors
Discrete Semiconductors
63-7020-24 IRF8788TRPBF N-Channel MOSFET, 24 A, 30 V HEXFET, 8-Pin SOIC Infineon IRF8788TRPBF
AXEL GLOBAL
カテゴリ一覧
Lab Instruments & Supplies
Electronic/Electrical Parts and Controll Equipments
RS Components
63-7020-24 IRF8788TRPBF N-Channel MOSFET, 24 A, 30 V HEXFET, 8-Pin SOIC Infineon IRF8788TRPBF
Infineon
63-7020-24 IRF8788TRPBF N-Channel MOSFET, 24 A, 30 V HEXFET, 8-Pin SOIC Infineon IRF8788TRPBF
印刷
PDF
特徴
N-Channel Power MOSFET 30 V, Infineon
Infineon's discrete HEXFETR power MOSFET products include an N-channel device in a surface mount package with a lead. In addition, it includes a form factor for almost any board layout or thermal design challenge. Benchmarking resistance across the range reduces conductive loss, enabling optimal system efficiency.
仕様
Quantity:1bag(10pieces)
Channel Type : N
Maximum Continuous Drain Current : 24 A
Maximum Drain Source Voltage : 30 V
Maximum Drain Source Resistance : 3.8 mΩ
Maximum Gate Threshold Voltage : 2.35V
Minimum Gate Threshold Voltage : 1.35V
Maximum Gate Source Voltage : -20 V, +20 V
Package Type : SOIC
Mounting Type : Surface Mount
Pin Count : 8
Channel Mode : Enhancement
Category : Power MOSFET
Maximum Power Dissipation : 2.5 W
Minimum Operating Temperature : -55 °C
CODE No.:130-0967
アズワン品番
63-7020-24
型番
IRF8788TRPBF
標準価格
JPY:
1,520
USD:
9.54
Excange rate 1USD= 159.42JPY
Valid price in Japan
入り数
1bag(10pieces)
在庫数
Supplier Stock
Quote
Other Requests