63-7020-21 IRF7907TRPBF Dual N-Channel MOSFET, 9.1 A, 11 A, 30 V HEXFET, 8-Pin SOIC Infineon IRF7907TRPBF
Features
- Dual N-Channel Power MOSFETs Infineon
- Infineon dual power MOSFETs integrate two HEXFETR devices to provide a space-saving and cost-effective switching solution for high component density designs where substrate space is paramount. Various packaging options allow designers to choose a dual N-channel configuration.
Spec
- Quantity:1bag(10pieces)
- Channel Type : N
- Maximum Continuous Drain Current : 9.1 A, 11 A
- Maximum Drain Source Voltage : 30 V
- Maximum Drain Source Resistance : 13.7 mΩ, 20.5 mΩ
- Maximum Gate Threshold Voltage : 2.35V
- Minimum Gate Threshold Voltage : 1.35V
- Maximum Gate Source Voltage : -20 V, +20 V
- Package Type : SOIC
- Mounting Type : Surface Mount
- Pin Count : 8
- Channel Mode : Enhancement
- Category : Power MOSFET
- Maximum Power Dissipation : 2 W
- Series : HEXFET
- CODE No.:130-0964
| Order No. | 63-7020-21 | |
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| Model No. | IRF7907TRPBF | |
| Standard price |
JPY: 1,850
USD: 11.51
Excange rate 1USD= 160.72JPY
Valid price in Japan |
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| Quantity | 1bag(10pieces) | |
| Stock in Japan |
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| Supplier Stock |
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