63-7020-17 ［Discontinued］IRF7853TRPBF N-Channel MOSFET, 8.3 A, 100 V HEXFET, 8-Pin SOIC Infineon IRF7853TRPBF
Features
- N-Channel Power MOSFET 100 V, Infineon
- Infineon's discrete HEXFETR power MOSFET products include an N-channel device in a surface mount package with a lead. In addition, it includes a form factor for almost any board layout or thermal design challenge. Benchmarking resistance across the range reduces conductive loss, enabling optimal system efficiency.
Spec
- Quantity:1bag(5pieces)
- Channel Type : N
- Maximum Continuous Drain Current : 8.3 A
- Maximum Drain Source Voltage : 100 V
- Maximum Drain Source Resistance : 18 mΩ
- Maximum Gate Threshold Voltage : 4.9V
- Minimum Gate Threshold Voltage : 3V
- Maximum Gate Source Voltage : -20 V, +20 V
- Package Type : SOIC
- Mounting Type : Surface Mount
- Pin Count : 8
- Channel Mode : Enhancement
- Category : Power MOSFET
- Maximum Power Dissipation : 2.5 W
- Typical Turn-Off Delay Time : 26 ns
- CODE No.:130-0960
| Order No. | 63-7020-17 | |
|---|---|---|
| Model No. | IRF7853TRPBF | |
| Standard price |
JPY: 750
USD: 4.70
Excange rate 1USD= 159.53JPY
Valid price in Japan |
|
| Quantity | 1bag(5pieces) | |
|
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| Stock in Japan | - | |