Infineon's discrete HEXFETR power MOSFET products include an N-channel device in a surface mount package with a lead. In addition, it includes a form factor for almost any board layout or thermal design challenge. Benchmarking resistance across the range reduces conductive loss, enabling optimal system efficiency.
Spec
Quantity:1bag(5pieces)
Channel Type : N
Maximum Continuous Drain Current : 8.3 A
Maximum Drain Source Voltage : 100 V
Maximum Drain Source Resistance : 18 mΩ
Maximum Gate Threshold Voltage : 4.9V
Minimum Gate Threshold Voltage : 3V
Maximum Gate Source Voltage : -20 V, +20 V
Package Type : SOIC
Mounting Type : Surface Mount
Pin Count : 8
Channel Mode : Enhancement
Category : Power MOSFET
Maximum Power Dissipation : 2.5 W
Typical Turn-Off Delay Time : 26 ns
CODE No.:130-0960
Order No.Order No.ss="init">
［Discontinued］IRF7853TRPBF N-Channel MOSFET, 8.3 A, 100 V HEXFET, 8-Pin SOIC Infineon IRF7853TRPBF 63-7020-17 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@-->
Infineon's discrete HEXFETR power MOSFET products include an N-channel device in a surface mount package with a lead. In addition, it includes a form factor for almost any board layout or thermal design challenge. Benchmarking resistance across the range reduces conductive loss, enabling optimal system efficiency.
仕様
Quantity:1bag(5pieces)
Channel Type : N
Maximum Continuous Drain Current : 8.3 A
Maximum Drain Source Voltage : 100 V
Maximum Drain Source Resistance : 18 mΩ
Maximum Gate Threshold Voltage : 4.9V
Minimum Gate Threshold Voltage : 3V
Maximum Gate Source Voltage : -20 V, +20 V
Package Type : SOIC
Mounting Type : Surface Mount
Pin Count : 8
Channel Mode : Enhancement
Category : Power MOSFET
Maximum Power Dissipation : 2.5 W
Typical Turn-Off Delay Time : 26 ns
CODE No.:130-0960
アズワン品番
63-7020-17
Model No.
IRF7853TRPBF
標準価格
JPY: 750USD: 4.71
Excange rate 1USD= 159.42JPY Valid price in Japan
Quantity
1bag(5pieces)
［Discontinued］IRF7853TRPBF N-Channel MOSFET, 8.3 A, 100 V HEXFET, 8-Pin SOIC Infineon IRF7853TRPBF 63-7020-17 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@-->
Infineon's discrete HEXFETR power MOSFET products include an N-channel device in a surface mount package with a lead. In addition, it includes a form factor for almost any board layout or thermal design challenge. Benchmarking resistance across the range reduces conductive loss, enabling optimal system efficiency.
