63-7020-16 ［Discontinued］IRF7820TRPBF N-Channel MOSFET, 3.7 A, 200 V HEXFET, 8-Pin SOIC Infineon IRF7820TRPBF
Features
- N-Channel Power MOSFET 150 → 600 V, Infineon
- Infineon's discrete HEXFETR power MOSFET products include an N-channel device in a reed surface mount package and a form factor for almost any board layout or thermal design challenge. Benchmarking resistance across the range reduces conductive loss, enabling optimal system efficiency.
Spec
- Quantity:1bag(10pieces)
- Channel Type : N
- Maximum Continuous Drain Current : 3.7 A
- Maximum Drain Source Voltage : 200 V
- Maximum Drain Source Resistance : 78 mΩ
- Maximum Gate Threshold Voltage : 5V
- Minimum Gate Threshold Voltage : 3V
- Maximum Gate Source Voltage : -20 V, +20 V
- Package Type : SOIC
- Mounting Type : Surface Mount
- Pin Count : 8
- Channel Mode : Enhancement
- Category : Power MOSFET
- Maximum Power Dissipation : 2.5 W
- Typical Turn-Off Delay Time : 14 ns
- CODE No.:130-0959
| Order No. | 63-7020-16 | |
|---|---|---|
| Model No. | IRF7820TRPBF | |
| Standard price |
JPY: 1,340
USD: 8.40
Excange rate 1USD= 159.53JPY
Valid price in Japan |
|
| Quantity | 1bag(10pieces) | |
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| Stock in Japan | - | |