63-7020-14 ［Discontinued］IRF7779L2TRPBF N-Channel MOSFET, 67 A, 150 V DirectFET, HEXFET, 9 + Tab-Pin L8 Infineon IRF7779L2TRPBF
Features
- DirectFETR Power MOSFET, Infineon The DirectFETR power package uses surface-mounted power MOSFET packaging technology. The DirectFETR MOSFET is a solution that reduces the footprint designed for advanced switching applications while reducing the amount of energy loss.
- Industry's lowest on-resistance contained in the appropriate footprint Very low package resistance minimizes conductive loss Very efficient double-sided cooling significantly improves power density, cost and reliability. Low profile of only 0.7 mm
Spec
- Quantity:1piece
- Channel Type : N
- Maximum Continuous Drain Current : 67 A
- Maximum Drain Source Voltage : 150 V
- Maximum Drain Source Resistance : 11 mΩ
- Maximum Gate Threshold Voltage : 5V
- Minimum Gate Threshold Voltage : 3V
- Maximum Gate Source Voltage : -20 V, +20 V
- Package Type : L8
- Mounting Type : Surface Mount
- Pin Count : 9 + Tab
- Channel Mode : Enhancement
- Category : Power MOSFET
- Maximum Power Dissipation : 125 W
- Maximum Operating Temperature : +175 °C
- CODE No.:130-0957
| Order No. | 63-7020-14 | |
|---|---|---|
| Model No. | IRF7779L2TRPBF | |
| Standard price |
JPY: 590
USD: 3.67
Excange rate 1USD= 160.72JPY
Valid price in Japan |
|
| Quantity | 1piece | |
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| Stock in Japan | - | |