Infineon

63-7020-14　［Discontinued］IRF7779L2TRPBF N-Channel MOSFET, 67 A, 150 V DirectFET, HEXFET, 9 + Tab-Pin L8 Infineon　IRF7779L2TRPBF

Features

DirectFETR Power MOSFET, Infineon The DirectFETR power package uses surface-mounted power MOSFET packaging technology.　The DirectFETR MOSFET is a solution that reduces the footprint designed for advanced switching applications while reducing the amount of energy loss.
Industry's lowest on-resistance contained in the appropriate footprint Very low package resistance minimizes conductive loss Very efficient double-sided cooling significantly improves power density, cost and reliability.　Low profile of only 0.7 mm

Spec

Quantity:1piece
Channel Type : N
Maximum Continuous Drain Current : 67 A
Maximum Drain Source Voltage : 150 V
Maximum Drain Source Resistance : 11 mΩ
Maximum Gate Threshold Voltage : 5V
Minimum Gate Threshold Voltage : 3V
Maximum Gate Source Voltage : -20 V, +20 V
Package Type : L8
Mounting Type : Surface Mount
Pin Count : 9 + Tab
Channel Mode : Enhancement
Category : Power MOSFET
Maximum Power Dissipation : 125 W
Maximum Operating Temperature : +175 °C
CODE No.:130-0957

Order No. 63-7020-14

Model No.Model No. class="init"> ［Discontinued］IRF7779L2TRPBF N-Channel MOSFET, 67 A, 150 V DirectFET, HEXFET, 9 + Tab-Pin L8 Infineon　IRF7779L2TRPBF 63-7020-14 【AXEL GLOBAL】 アズワン

取扱点数300万点

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Infineon

63-7020-14　［Discontinued］IRF7779L2TRPBF N-Channel MOSFET, 67 A, 150 V DirectFET, HEXFET, 9 + Tab-Pin L8 Infineon　IRF7779L2TRPBF

印刷

特徴

DirectFETR Power MOSFET, Infineon The DirectFETR power package uses surface-mounted power MOSFET packaging technology.　The DirectFETR MOSFET is a solution that reduces the footprint designed for advanced switching applications while reducing the amount of energy loss.
Industry's lowest on-resistance contained in the appropriate footprint Very low package resistance minimizes conductive loss Very efficient double-sided cooling significantly improves power density, cost and reliability.　Low profile of only 0.7 mm

仕様

Quantity:1piece
Channel Type : N
Maximum Continuous Drain Current : 67 A
Maximum Drain Source Voltage : 150 V
Maximum Drain Source Resistance : 11 mΩ
Maximum Gate Threshold Voltage : 5V
Minimum Gate Threshold Voltage : 3V
Maximum Gate Source Voltage : -20 V, +20 V
Package Type : L8
Mounting Type : Surface Mount
Pin Count : 9 + Tab
Channel Mode : Enhancement
Category : Power MOSFET
Maximum Power Dissipation : 125 W
Maximum Operating Temperature : +175 °C
CODE No.:130-0957

アズワン品番	63-7020-14
型番	IRF7779L2TRPBF
Standard price	JPY: 590 USD: 3.70 Excange rate 1USD= 159.42JPY Valid price in Japan
Quantity	1piece

Stock in Japan	-

This page is the page of ［Discontinued］IRF7779L2TRPBF N-Channel MOSFET, 67 A, 150 V DirectFET, HEXFET, 9 + Tab-Pin L8 Infineon sold by AS ONE CORPORATION. AXEL GLOBAL is a website that lists more than 3 million products that are used in a wide range of fields, including Research and Development, Production,Semiconductor, Medicine, Nursing care, and Food sanitation.

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(for Supplier)ASONEs="init"> ［Discontinued］IRF7779L2TRPBF N-Channel MOSFET, 67 A, 150 V DirectFET, HEXFET, 9 + Tab-Pin L8 Infineon　IRF7779L2TRPBF 63-7020-14 【AXEL GLOBAL】 アズワン

Listed products : 3 milion products

How to use

Quote Other Requests

Infineon

63-7020-14　［Discontinued］IRF7779L2TRPBF N-Channel MOSFET, 67 A, 150 V DirectFET, HEXFET, 9 + Tab-Pin L8 Infineon　IRF7779L2TRPBF

Features

DirectFETR Power MOSFET, Infineon The DirectFETR power package uses surface-mounted power MOSFET packaging technology.　The DirectFETR MOSFET is a solution that reduces the footprint designed for advanced switching applications while reducing the amount of energy loss.
Industry's lowest on-resistance contained in the appropriate footprint Very low package resistance minimizes conductive loss Very efficient double-sided cooling significantly improves power density, cost and reliability.　Low profile of only 0.7 mm

Spec

Quantity:1piece
Channel Type : N
Maximum Continuous Drain Current : 67 A
Maximum Drain Source Voltage : 150 V
Maximum Drain Source Resistance : 11 mΩ
Maximum Gate Threshold Voltage : 5V
Minimum Gate Threshold Voltage : 3V
Maximum Gate Source Voltage : -20 V, +20 V
Package Type : L8
Mounting Type : Surface Mount
Pin Count : 9 + Tab
Channel Mode : Enhancement
Category : Power MOSFET
Maximum Power Dissipation : 125 W
Maximum Operating Temperature : +175 °C
CODE No.:130-0957

Order No.	63-7020-14
Model No.	IRF7779L2TRPBF
Standard price	JPY: 590 USD: 3.70 Excange rate 1USD= 159.42JPY Valid price in Japan
Quantity	1piece

Stock in Japan	-