63-7020-12 [Discontinued]IRF7759L2TRPBF N-Channel MOSFET, 160 A, 75 V DirectFET, HEXFET, 9 + Tab-Pin L8 Infineon IRF7759L2TRPBF
FeaturesFeatures class="init">
[Discontinued]IRF7759L2TRPBF N-Channel MOSFET, 160 A, 75 V DirectFET, HEXFET, 9 + Tab-Pin L8 Infineon IRF7759L2TRPBF 63-7020-12 【AXEL GLOBAL】 アズワン
Contact us
Infineon
63-7020-12 [Discontinued]IRF7759L2TRPBF N-Channel MOSFET, 160 A, 75 V DirectFET, HEXFET, 9 + Tab-Pin L8 Infineon IRF7759L2TRPBF
特徴
- DirectFETR Power MOSFET, Infineon The DirectFETR power package uses surface-mounted power MOSFET packaging technology. The DirectFETR MOSFET is a solution that reduces the footprint designed for advanced switching applications while reducing the amount of energy loss.
- Industry's lowest on-resistance contained in the appropriate footprint Very low package resistance minimizes conductive loss Very efficient double-sided cooling significantly improves power density, cost and reliability. Low profile of only 0.7 mm
Spec
- Quantity:1piece
- Channel Type : N
- Maximum Continuous Drain Current : 160 A
- Maximum Drain Source Voltage : 75 V
- Maximum Drain Source Resistance : 2.3 mΩ
- Maximum Gate Threshold Voltage : 4V
- Minimum Gate Threshold Voltage : 2V
- Maximum Gate Source Voltage : -20 V, +20 V
- Package Type : L8
- Mounting Type : Surface Mount
- Pin Count : 9 + Tab
- Channel Mode : Enhancement
- Category : Power MOSFET
- Maximum Power Dissipation : 125 W
- Minimum Operating Temperature : -55 °C
- CODE No.:130-0955
-
Order No.Order No.ss="init">
[Discontinued]IRF7759L2TRPBF N-Channel MOSFET, 160 A, 75 V DirectFET, HEXFET, 9 + Tab-Pin L8 Infineon IRF7759L2TRPBF 63-7020-12 【AXEL GLOBAL】 アズワン
Contact us
Infineon
63-7020-12 [Discontinued]IRF7759L2TRPBF N-Channel MOSFET, 160 A, 75 V DirectFET, HEXFET, 9 + Tab-Pin L8 Infineon IRF7759L2TRPBF
特徴
- DirectFETR Power MOSFET, Infineon The DirectFETR power package uses surface-mounted power MOSFET packaging technology. The DirectFETR MOSFET is a solution that reduces the footprint designed for advanced switching applications while reducing the amount of energy loss.
- Industry's lowest on-resistance contained in the appropriate footprint Very low package resistance minimizes conductive loss Very efficient double-sided cooling significantly improves power density, cost and reliability. Low profile of only 0.7 mm
仕様
- Quantity:1piece
- Channel Type : N
- Maximum Continuous Drain Current : 160 A
- Maximum Drain Source Voltage : 75 V
- Maximum Drain Source Resistance : 2.3 mΩ
- Maximum Gate Threshold Voltage : 4V
- Minimum Gate Threshold Voltage : 2V
- Maximum Gate Source Voltage : -20 V, +20 V
- Package Type : L8
- Mounting Type : Surface Mount
- Pin Count : 9 + Tab
- Channel Mode : Enhancement
- Category : Power MOSFET
- Maximum Power Dissipation : 125 W
- Minimum Operating Temperature : -55 °C
- CODE No.:130-0955
-
アズワン品番
63-7020-12
Model No.Model No. class="init">
[Discontinued]IRF7759L2TRPBF N-Channel MOSFET, 160 A, 75 V DirectFET, HEXFET, 9 + Tab-Pin L8 Infineon IRF7759L2TRPBF 63-7020-12 【AXEL GLOBAL】 アズワン
Contact us
Infineon
63-7020-12 [Discontinued]IRF7759L2TRPBF N-Channel MOSFET, 160 A, 75 V DirectFET, HEXFET, 9 + Tab-Pin L8 Infineon IRF7759L2TRPBF
特徴
- DirectFETR Power MOSFET, Infineon The DirectFETR power package uses surface-mounted power MOSFET packaging technology. The DirectFETR MOSFET is a solution that reduces the footprint designed for advanced switching applications while reducing the amount of energy loss.
- Industry's lowest on-resistance contained in the appropriate footprint Very low package resistance minimizes conductive loss Very efficient double-sided cooling significantly improves power density, cost and reliability. Low profile of only 0.7 mm
仕様
- Quantity:1piece
- Channel Type : N
- Maximum Continuous Drain Current : 160 A
- Maximum Drain Source Voltage : 75 V
- Maximum Drain Source Resistance : 2.3 mΩ
- Maximum Gate Threshold Voltage : 4V
- Minimum Gate Threshold Voltage : 2V
- Maximum Gate Source Voltage : -20 V, +20 V
- Package Type : L8
- Mounting Type : Surface Mount
- Pin Count : 9 + Tab
- Channel Mode : Enhancement
- Category : Power MOSFET
- Maximum Power Dissipation : 125 W
- Minimum Operating Temperature : -55 °C
- CODE No.:130-0955
-
アズワン品番
63-7020-12
型番
IRF7759L2TRPBF
Standard price
JPY: 590
USD: 3.70
Excange rate 1USD= 159.42JPY
Valid price in Japan
QuantityQuantityass="init">
[Discontinued]IRF7759L2TRPBF N-Channel MOSFET, 160 A, 75 V DirectFET, HEXFET, 9 + Tab-Pin L8 Infineon IRF7759L2TRPBF 63-7020-12 【AXEL GLOBAL】 アズワン
Contact us
Infineon
63-7020-12 [Discontinued]IRF7759L2TRPBF N-Channel MOSFET, 160 A, 75 V DirectFET, HEXFET, 9 + Tab-Pin L8 Infineon IRF7759L2TRPBF
特徴
- DirectFETR Power MOSFET, Infineon The DirectFETR power package uses surface-mounted power MOSFET packaging technology. The DirectFETR MOSFET is a solution that reduces the footprint designed for advanced switching applications while reducing the amount of energy loss.
- Industry's lowest on-resistance contained in the appropriate footprint Very low package resistance minimizes conductive loss Very efficient double-sided cooling significantly improves power density, cost and reliability. Low profile of only 0.7 mm
仕様
- Quantity:1piece
- Channel Type : N
- Maximum Continuous Drain Current : 160 A
- Maximum Drain Source Voltage : 75 V
- Maximum Drain Source Resistance : 2.3 mΩ
- Maximum Gate Threshold Voltage : 4V
- Minimum Gate Threshold Voltage : 2V
- Maximum Gate Source Voltage : -20 V, +20 V
- Package Type : L8
- Mounting Type : Surface Mount
- Pin Count : 9 + Tab
- Channel Mode : Enhancement
- Category : Power MOSFET
- Maximum Power Dissipation : 125 W
- Minimum Operating Temperature : -55 °C
- CODE No.:130-0955
-
アズワン品番
63-7020-12
型番
IRF7759L2TRPBF
標準価格
JPY: 590
USD: 3.70
Excange rate 1USD= 159.42JPY
Valid price in Japan
入り数
1piece
在庫数
-
63-7020-12 [Discontinued]IRF7759L2TRPBF N-Channel MOSFET, 160 A, 75 V DirectFET, HEXFET, 9 + Tab-Pin L8 Infineon IRF7759L2TRPBF
特徴
- DirectFETR Power MOSFET, Infineon The DirectFETR power package uses surface-mounted power MOSFET packaging technology. The DirectFETR MOSFET is a solution that reduces the footprint designed for advanced switching applications while reducing the amount of energy loss.
- Industry's lowest on-resistance contained in the appropriate footprint Very low package resistance minimizes conductive loss Very efficient double-sided cooling significantly improves power density, cost and reliability. Low profile of only 0.7 mm
Spec
- Quantity:1piece
- Channel Type : N
- Maximum Continuous Drain Current : 160 A
- Maximum Drain Source Voltage : 75 V
- Maximum Drain Source Resistance : 2.3 mΩ
- Maximum Gate Threshold Voltage : 4V
- Minimum Gate Threshold Voltage : 2V
- Maximum Gate Source Voltage : -20 V, +20 V
- Package Type : L8
- Mounting Type : Surface Mount
- Pin Count : 9 + Tab
- Channel Mode : Enhancement
- Category : Power MOSFET
- Maximum Power Dissipation : 125 W
- Minimum Operating Temperature : -55 °C
- CODE No.:130-0955
Order No.Order No.ss="init">
63-7020-12 [Discontinued]IRF7759L2TRPBF N-Channel MOSFET, 160 A, 75 V DirectFET, HEXFET, 9 + Tab-Pin L8 Infineon IRF7759L2TRPBF特徴
仕様
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![[Discontinued]IRF7759L2TRPBF N-Channel MOSFET, 160 A, 75 V DirectFET, HEXFET, 9 + Tab-Pin L8 Infineon IRF7759L2TRPBF](https://aimg.as-1.co.jp/c/63/7020/12/63702012.jpg?v=03790be0f2ba82c1280907a7033cf49dabaaa7c1)