63-7020-05 IRF6648TRPBF N-Channel MOSFET, 86 A, 60 V DirectFET, HEXFET, 3+Tab-Pin MN Infineon IRF6648TRPBF
Features
- DirectFETR Power MOSFET, Infineon The DirectFETR power package uses surface-mounted power MOSFET packaging technology. The DirectFETR MOSFET is a solution that reduces the footprint designed for advanced switching applications while reducing the amount of energy loss.
- Industry's lowest on-resistance contained in the appropriate footprint Very low package resistance minimizes conductive loss Very efficient double-sided cooling significantly improves power density, cost and reliability. Low profile of only 0.7 mm
Spec
- Quantity:1bag(2pieces)
- Channel Type : N
- Maximum Continuous Drain Current : 86 A
- Maximum Drain Source Voltage : 60 V
- Maximum Drain Source Resistance : 7 mΩ
- Maximum Gate Threshold Voltage : 4.9V
- Minimum Gate Threshold Voltage : 3V
- Maximum Gate Source Voltage : -20 V, +20 V
- Package Type : MN
- Mounting Type : Surface Mount
- Pin Count : 3 + Tab
- Channel Mode : Enhancement
- Category : Power MOSFET
- Maximum Power Dissipation : 89 W
- Height : 0.5mm
- CODE No.:130-0948
| Order No. | 63-7020-05 | |
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| Model No. | IRF6648TRPBF | |
| Standard price |
JPY: 620
USD: 3.89
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1bag(2pieces) | |
| Stock in Japan |
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| Supplier Stock |
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