63-7020-01 ［Discontinued］IRF40H210 N-Channel MOSFET, 201 A, 40 V HEXFET, 8-Pin PQFN Infineon IRF40H210
Features
- StrongIRFET Power MOSFET, Infineon
- The StrongIRFET family made by Infineon is optimized for low R DS (on) and high current passability. This portfolio provides excellent gate characteristics, avalanche characteristics, and dynamic dv/dt durability for low-frequency applications including motor drives, power tools, inverters, and battery management that require performance and robustness.
Spec
- Quantity:1bag(5pieces)
- Channel Type : N
- Maximum Continuous Drain Current : 201 A
- Maximum Drain Source Voltage : 40 V
- Maximum Drain Source Resistance : 1.7 mΩ
- Maximum Gate Threshold Voltage : 3.7V
- Minimum Gate Threshold Voltage : 2.2V
- Maximum Gate Source Voltage : -20 V, +20 V
- Package Type : PQFN
- Mounting Type : Surface Mount
- Pin Count : 8
- Channel Mode : Enhancement
- Category : Power MOSFET
- Maximum Power Dissipation : 125 W
- Typical Gate Charge @ Vgs : 101 nC @ 10 V
- CODE No.:130-0943
| Order No. | 63-7020-01 | |
|---|---|---|
| Model No. | IRF40H210 | |
| Standard price |
JPY: 1,470
USD: 9.15
Excange rate 1USD= 160.72JPY
Valid price in Japan |
|
| Quantity | 1bag(5pieces) | |
|
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| Stock in Japan | - | |