63-7019-99 ［Discontinued］IRF3717TRPBF N-Channel MOSFET, 20 A, 20 V HEXFET, 8-Pin SOIC Infineon IRF3717TRPBF
Features
- N-Channel Power MOSFET 12 → 25 V, Infineon
- Infineon's discrete HEXFETR power MOSFET products include an N-channel device in a reed surface mount package and a form factor for almost any board layout or thermal design challenge. Benchmarking resistance across the range reduces conductive loss, enabling optimal system efficiency.
Spec
- Quantity:1bag(10pieces)
- Channel Type : N
- Maximum Continuous Drain Current : 20 A
- Maximum Drain Source Voltage : 20 V
- Maximum Drain Source Resistance : 5.7 mΩ
- Maximum Gate Threshold Voltage : 2.45V
- Minimum Gate Threshold Voltage : 1.55V
- Maximum Gate Source Voltage : -20 V, +20 V
- Package Type : SOIC
- Mounting Type : Surface Mount
- Pin Count : 8
- Channel Mode : Enhancement
- Category : Power MOSFET
- Maximum Power Dissipation : 2.5 W
- Minimum Operating Temperature : -55 °C
- CODE No.:130-0941
| Order No. | 63-7019-99 | |
|---|---|---|
| Model No. | IRF3717TRPBF | |
| Standard price |
JPY: 1,230
USD: 7.65
Excange rate 1USD= 160.72JPY
Valid price in Japan |
|
| Quantity | 1bag(10pieces) | |
|
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| Stock in Japan | - | |